Abstract:Highlights • F, Cl and Ga co-doped ZnO films were prepared by sol-gel spin coating. • Good electrical properties of F, Cl and Ga co-doped ZnO films were achieved. • A nearly 90 % average transmittance in the optical range of 380–1600 nm was achieved. Transparent conductive films (TCFs) are crucial components of solar cells. In this study, F, Cl, and Ga co-doped ZnO (FCGZO) TCFs were deposited onto a glass substrate using the sol-gel spin-coating method and rapid thermal annealing. The effects of F-doping content on the structural, morphological, electrical, and optical properties of FCGZO films were examined by XRD, TEM, FE-SEM, PL spectroscopy, XPS, Hall effects testing, and UV–vis–NIR spectroscopy. All prepared ZnO films exhibited a hexagonal wurtzite structure and preferentially grew along the c axis perpendicular to the substrate. Changes in the doping concentration of F changed the interplanar crystal spacing and O vacancies in the film. At a doping ratio of 2 % (in mole), the F, Cl, and Ga co-doped ZnO film exhibited the best photoelectric performance, with a carrier concentration of 2.62 × 10 20 cm −3 , mobility of 14.56 cm 2 /(V·s), and resistivity of 1.64 × 10 −3 Ω·cm. The average transmittance (AT) in the 380–1600 nm region nearly 90 % with air as the reference, and the optical band gap was 3.52 eV. Graphical abstract Download : Download high-res image (211KB) Download : Download full-size image

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