Abstract:(AlxGa1–x)2O3 is emerging as a promising wide-band-gap sesquioxide for vacuum-ultraviolet (VUV, 10–200 nm) photodetectors and high-power field-effect transistors. However, how the key parameters such as the band gap and crystalline phase of the (AlxGa1–x)2O3-based device vary with stoichiometry has not been explicitly defined, which is due to the unclear underlying mechanism of the Al local coordination environment. In this work, a high-pressure O2 (20 atm) annealing (HPOA) strategy that can significantly improve the crystallinity of β-(AlxGa1–x)2O3 and achieve a tunable optical band gap was proposed, facilitating the revelation of the local structure of Al3+ varying with Al content and the kinetic mechanism of Al3+ diffusion. By combining the as-HPOA-treated single-crystalline β-(Al0.69Ga0.31)2O3 films with p-type graphene (p-Gr), which serves as a transparent conductor, a VUV photovoltaic detector is fabricated, showing an improved photovoltage (0.80 V) and fast temporal response (2.1 μs). All of these findings provide a rewarding and important strategy for enhancing the band-gap tunability of sesquioxides, as well as the flexibility of zero-power-consumption photodetectors.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c00429?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c00429</a>.XPS and XRD spectra; wavelength-dependent responsivity curve; full transmission spectra (200–800 nm range) of (AlxGa1–x)2O3 films; comparison between photoconductive device with and without HPOA treatment; SEM, element maps, and energy band diagram of heterostructures; schematic diagram of response speed measurement (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c00429/suppl_file/am1c00429_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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