Abstract:It is generally known that a layer of amorphous silicon oxide (SiO2) naturally exists on the surface of silicon, resulting in the growth of gallium oxide (Ga2O3) that is no longer affected by substrate crystallinity during sputtering. This work highlights the formation energy between the native amorphous nano-oxide film formed on the Si substrate and monoclinic β-Ga2O3 dominating the preferred orientation prepared for deep ultraviolet photodetectors. The latter were deposited on p-type silicon (p-Si) with (111) orientation using radio frequency sputtering at 600 °C and post rapid thermal annealing (RTA). The X-ray diffraction (XRD) results indicate both as-deposited and postannealing films with the (400) preferred orientation for a layer thickness of 100 nm. However, slight random orientation with the amorphous structure is mixed in the preferred one for the as-deposited film with a thickness of 200 nm and reduced after being annealed at 800 °C, which is observed by XRD and transmission electron microscopy. Meanwhile, thermal-induced massive twin boundaries (TBs) and stacking faults (SFs) were generated when annealed at 1000 °C, owing to the relaxation of lattice strain by the coherent interface. The interfacial bonding energy per unit area (E i) between β-Ga2O3 films with various facets ((001), (010), (100), and (2̅01)) and amorphous SiO2 was calculated using density functional theory. The E i of β-Ga2O3 (100)/SiO2 reveals the highest value (0.289 eV/Å2), which is consistent with the (100) preferred orientation of deposited films. The (100) preferred orientation is the driving force for TBs and SFs. The discrimination of responsivities and the photo/dark current contrast ratio (I ph/I dark) are inversely proportional to the amorphous structure, grain boundaries, TBs, and SFs. Therefore, optimum metal-semiconductor-metal photodetector performance is achieved for RTA-treated samples at 800 °C with an I ph/I dark of 3.91 × 102 and a responsivity of 0.702 A/W (λpeak = 230 nm) at 5 V bias for a 200 nm thin film.

Influence of Si flow rate on the performance of MOCVD-deposited Si-doped Ga 2 O 3 films and the applications in ultraviolet photodetectors

Effect of oxygen flow ratio on the performance of RF magnetron sputtered Sn-doped Ga2O3 films and ultraviolet photodetector

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Role of Interfacial Oxide in the Preferred Orientation of Ga2O3 on Si for Deep Ultraviolet Photodetectors

Characteristics of Ga-doped ZnO Thin-Film Ultraviolet Photodetectors Fabricated on Patterned Si Substrate

High-performance solar-blind photodetector based on Si-doped α-Ga2O3 thin films grown by mist chemical vapor deposition

Precise control of the microstructural, optical, and electrical properties of ultrathin Ga2O3 film through nanomixing with few atom-thick SiO2 interlayer via plasma enhanced atomic layer deposition

Unintentional Doping Effect in Si-doped MOCVD Β-Ga2o3 Films: Shallow Donor States

Influence of Oxygen on Β-Ga2o3 Films Deposited on Sapphire Substrates by MOCVD

Growth and characterization of Si-doped Ga2O3 thin films by remote plasma atomic layer deposition: Toward UVC-LED application

Low MOCVD growth temperature controlled phase transition of Ga2O3 films for ultraviolet sensing

Deep UV transparent conductive Si-doped Ga2O3 thin films grown on Al2O3 substrates

Record-High Electron Mobility and Controlled Low 10$^{15}$ cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers

Preparation of Sn-Doped Ga2O3 Thin Films and MSM Ultraviolet Detectors Using Magnetron Co-Sputtering

ε-Ga2O3 thin films grown by metal-organic chemical vapor deposition and its application as solar-blind photodetectors

Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

Sensitive Direct Converting Thin Film X-Ray Detector Utilizing Β-Ga2o3 Fabricated Via MOCVD

Highly preferred orientation of Ga2O3 films sputtered on SiC substrates for deep UV photodetector application

Combinatorial tuning of structure and optoelectronic properties of Zn-Ga-O thin films for deep ultraviolet photodetection

Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor

Investigation of Ga2O3-Based Deep Ultraviolet Photodetectors Using Plasma-Enhanced Atomic Layer Deposition System