3D-CT evaluation of metallic implants: principles, techniques, and applications.

E. G. Neyman,Frank S Corl,E. Fishman

DOI: https://doi.org/10.1080/10408370290807678

Critical Reviews in Computed Tomography

Abstract:

What problem does this paper attempt to address?

Ultralow dark current and high specific detectivity of Ga2O3-based solar-blind photodetector arrays realized via post-annealing in oxygen plasma

Linjie Bao,Zheng Liang,Siliang Kuang,Bohan Xiao,Kelvin H. L. Zhang,Xiangyu Xu,Qijin Cheng

DOI: https://doi.org/10.1039/d4tc02859g

IF: 6.4

2024-08-25

Journal of Materials Chemistry C

Abstract:Ga2O3 has an ultra-wide bandgap of 4.9 eV and is a suitable semiconductor for the solar-blind photodetectors (SBPDs). However, the present study shows that the dark current of the Ga2O3-based SBPDs is high due to the defects on the surface and inside the crystal, and that the specific detectivity of the devices is also limited to some extent. In this work, we combine post-annealing with plasma treatment, proposing a method of plasma treatment at a high temperature, which yields outstanding device performance. It is demonstrated that the SBPD based on Ga2O3 thin film treated by oxygen plasma at 700 °C possesses excellent overall performance, including an ultralow dark current of 44 fA, a high specific detectivity of 1.45 × 1016 Jones, a decay time of 58 ms and a responsivity of 264.1 A/W at a bias of 20 V. Furthermore, we fabricate a 10 × 10 photodetector array based on 1-inch Ga2O3 thin film treated by oxygen plasma at 700 °C, with excellent uniformity of photocurrent and dark current distribution across all pixels as well as an excellent imaging capability. Finally, in combination with the analysis of photoluminescence spectra and valence band spectra, the underlying physical mechanism based on the energy band diagram has been proposed to interpret the obtained experimental result. This work has advanced the development of high-performance Ga2O3-based SBPDs and promoted their application in high-precision solar-blind ultraviolet imaging.

materials science, multidisciplinary,physics, applied
Review of deep ultraviolet photodetector based on gallium oxide

Yuan Qin,Shibing Long,Hang Dong,Qiming He,Guangzhong Jian,Ying Zhang,Xiaohu Hou,Pengju Tan,Zhongfang Zhang,Hangbing Lv,Qi Liu,Ming Liu

DOI: https://doi.org/10.1088/1674-1056/28/1/018501

2019-01-01

Chinese Physics B

Abstract:Ultraviolet (UV) photodetectors (PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga2O3 is regarded as the most promising candidate for UV detection. Furthermore, the bandgap of Ga2O3 is as high as 4.7-4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga2O3 to tune its bandgap, compared to AlGaN, MgZnO, etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga2O3 photodetectors based on single crystal or amorphous Ga2O3 are mainly focused on metal-semiconductor-metal and Schottky photodiodes. In this work, the recent achievements of Ga2O3 photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga2O3 and amorphous Ga2O3 thin film are analyzed and compared. Finally, the prospects of Ga2O3 UV photodetectors are forecast.
Performance Improvement of Amorphous Ga2O3/P-Si Deep Ultraviolet Photodetector by Oxygen Plasma Treatment

Jin Cao,Liang Chen,Xin Chen,Yu Zhu,Jianqi Dong,Baoyu Wang,Miao He,Xingfu Wang

DOI: https://doi.org/10.3390/cryst11101248

IF: 2.7

2021-01-01

Crystals

Abstract:Gallium oxide (Ga2O3) is an attractive semiconductor that is very suitable for deep ultraviolet (DUV) inspection. However, due to the existence of many types of oxygen vacancies in the amorphous Ga2O3 (a-Ga2O3) film, it greatly limits the performance of the a-Ga2O3-based photodetector. Here, we perform oxygen plasma treatment on the a-Ga2O3/p-Si photodetector to reduce the concentration of oxygen vacancies in the a-Ga2O3 film, so that the dark current is reduced by an order of magnitude (from 1.01 × 10−3 A to 1.04 × 10−4 A), and the responsivity is increased from 3.7 mA/W to 9.97 mA/W. In addition, oxygen plasma processing makes the photodetector operate well at 0 V bias. The response speed is that the rise time is 2.45 ms and the decay time is 1.83 ms, while it does not respond to the DUV illumination without oxygen plasma treating at a zero bias. These results are attributed to the fact that oxygen plasma treatment can reduce the Schottky barrier between a-Ga2O3 and the electrode indium tin oxide (ITO), which promotes the separation and collection efficiency of photo-generated carriers. Therefore, this work proposes a low-cost method to improve the performance of Ga2O3 film-based DUV photodetectors.
Low-temperature spatial atomic layer deposited Ga 2 O 3 films for high-performance flexible deep ultraviolet photodetector

Chia-Hsun Hsu,Run-Feng Zhu,Pin-Chun Kang,Peng Gao,Wan-Yu Wu,Dong-Sing Wuu,Shui-Yang Lien,Wen-Zhang Zhu

DOI: https://doi.org/10.1016/j.matlet.2023.134204

IF: 3

2023-03-13

Materials Letters

Abstract:This research aims to prepare amorphous gallium oxide (α-Ga 2 O 3 ) films for use in flexible deep ultraviolet photodetectors. The films are deposited using high-speed spatial atomic layer deposition (SALD) at different substrate temperatures. The experimental results show that the saturating deposition rate at 145-155°C is four to sixteen times higher than that of temporal ALD. Moreover, under the saturated SALD conditions the deposited film has less carbon impurities, oxygen-related defects, and greater compactness than under non-saturated conditions. Finally, a high-performance flexible deep ultraviolet α-Ga 2 O 3 photodetector with fast decay time of 161 μs and low dark current density of 6.8×10 -10 A/cm 2 is achieved.

materials science, multidisciplinary,physics, applied
Oxygen-vacancy-dependent high-performance α-Ga2O3 nanorods photoelectrochemical deep UV photodetectors

Lihang Qu,Jie Ji,Xin Liu,Zhitao Shao,Mengqi Cui,Yunxiao Zhang,Zhendong Fu,Yuewu Huang,Guang Yang,Wei Feng

DOI: https://doi.org/10.1088/1361-6528/acbfbd

IF: 3.5

2023-03-02

Nanotechnology

Abstract:Ga2O3 is a good candidate for deep ultraviolet photodetectors due to its wide-bandgap, good chemical, and thermal stability. Ga2O3-based photoelectrochemical (PEC) photodetectors attract increasing attention due to the simple fabrication and self-powered capability, but the corresponding photoresponse is still inferior. In this paper, the oxygen vacancy (Vo) engineering towards α-Ga2O3 was proposed to obtain high-performance PEC photodetectors. The α-Ga2O3 nanorods were synthesized by a simple hydrothermal method with an annealding process. The final samples were named as Ga2O3-400, Ga2O3-500, and Ga2O3-600 for annealing at 400, 500, and 600 °C, respectively. Different annealing temperatures lead to different Vo concentrations in the α-Ga2O3 nanorods. The responsivity is 101.5 mA/W for Ga2O3-400 nanorod film-based PEC photodetectors under 254 nm illumination, which is 1.4 and 4.0 times higher than those of Ga2O3-500 and Ga2O3-600 nanorod film-based PEC photodetectors, respectively. The photoresponse of α-Ga2O3 nanorod film-based PEC photodetectors strongly depends on the Vo concentration and high Vo concentration accelerates the interfacial carrier transfer of Ga2O3-400, enhancing the photoresponse of Ga2O3-400 nanorod film-based PEC photodetectors. Furthermore, the α-Ga2O3 nanorod film-based PEC photodetectors have good multicycle, long-term stability, and repeatability. Our result shows that α-Ga2O3 nanorods have promising applications in deep UV photodetectors.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
High-performance -Ga<sub>2</sub>O<sub>3</sub> thickness dependent solar blind photodetector

Xiaoyu Zhang,Ling Wang,Xudong Wang,Yan Chen,Qianqian Shao,Guangjian Wu,Xianying Wang,Tie Lin,Hong Shen,Jianlu Wang,Xiangjian Meng,Junhao Chu

DOI: https://doi.org/10.1364/OE.385470

IF: 3.8

2020-01-01

Optics Express

Abstract:Gallium oxide (Ga2O3) has been studied as one of the most promising wide bandgap semiconductors during the past decade. Here, we prepared high quality beta-Ga2O3 films by pulsed laser deposition. beta-Ga2O3 films of different thicknesses were achieved and their crystal properties were comprehensively studied. As thickness increases, grain size and surface roughness are both increased. Based on these beta-Ga2O3 films, a series of ultraviolet (UV) photodetectors with interdigital electrodes structure were prepared. These devices embrace an ultralow dark current of 100 fA, and high photocurrent on/off ratio of 10E8 under UV light illumination. The photoresponse time is 4 ms which is faster than most of previous works. This work paves the way for the potential application of Ga2O3 in the field of UV detection. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Performance improvement of amorphous Ga2O3 ultraviolet photodetector by annealing under oxygen atmosphere

Changqi Zhou,Kewei Liu,Xing Chen,Jiaheng Feng,Jialin Yang,Zhenzhong Zhang,Lei Liu,Yang Xia,Dezhen Shen

DOI: https://doi.org/10.1016/j.jallcom.2020.155585

IF: 6.2

2020-11-01

Journal of Alloys and Compounds

Abstract:We have demonstrated the fast-speed and high-rejection-ratio solar-blind ultraviolet (UV) photodetectors based on amorphous Ga2O3 (a-Ga2O3) films grown by atomic layer deposition. The effect of the annealing under oxygen atmosphere on the performance of a-Ga2O3 photodetectors is investigated. By the oxygen annealing at 500 °C, the 90-10% decay time of a-Ga2O3 photodetector can be decreased to ∼150 ns, and the UV/Visible rejection ratio of the photodetector can reach as high as 2.74×105, due to the significant suppression of the visible light response. Moreover, the dark current of the 500 °C-annealed photodetector is only 9.43 pA at 10 V bias. These phenomena can be explained by the decrease in oxygen vacancy concentration of the a-Ga2O3 films after the oxygen annealing. The combination of high rejection ratios and fast operating speeds offers a viable way for facile and scalable fabrication of the oxide semiconductor solar-blind UV detectors.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
MOCVD growth of MgGa 2 O 4 thin films for high-performance solar-blind UV photodetectors

Qichao Hou,Kewei Liu,Dongyang Han,Yongxue Zhu,Xing Chen,Binghui Li,Lei Liu,Dezhen Shen

DOI: https://doi.org/10.1063/5.0077904

IF: 4

2022-01-03

Applied Physics Letters

Abstract:Epitaxial MgGa2O4 thin films with a bandgap of 5.18 eV were grown on the c-plane sapphire substrate by using metal organic chemical vapor deposition. The structure, optical, electronic, and optoelectronic properties of MgGa2O4 thin films have been investigated before and after high-temperature annealing in an oxygen or nitrogen atmosphere. In particular, the O2-annealed MgGa2O4 thin film reveals a high crystalline quality and a low concentration of oxygen vacancies. Moreover, a quick response speed (tr = 20 ns, td = 400 ns), a low dark current (∼17 pA at 10 V), and a high UV/Visible rejection ratio (>105) can be demonstrated in the O2-annealed MgGa2O4 photodetector, indicating the excellent solar-blind ultraviolet (SBUV) photodetection characteristics. The effect of annealing atmosphere on the photoelectric properties of the film and its physical mechanism were studied. This research provides an effective way to realize high-performance SBUV photodetectors and opens up the application of MgGa2O4 spinel in the field of semiconductor optoelectronic and microelectronic devices.

physics, applied
Enhancing β-Ga2O3-film ultraviolet detectors via RF magnetron sputtering with seed layer insertion on c-plane sapphire substrate

Guodong Wang,Haohan Wang,Tingyu Chen,Yanji Feng,Hua Zeng,Lanlan Guo,Xiaolian Liu,Yingli Yang

DOI: https://doi.org/10.1088/1361-6528/ad0f57

IF: 3.5

2023-12-12

Nanotechnology

Abstract:Gallium oxide (Ga2O3) possesses a band gap of approximately 4.9 eV, aligning its detection wavelength within the solar-blind region, making it an ideal semiconductor material for solar-blind photodetectors. This study aims to enhance the performance of Ga2O3ultraviolet (UV) detectors by pre-depositing a Ga2O3seed layer on ac-plane sapphire substrate. The x-ray diffraction and x-ray photoelectron spectroscopy analyses validated that the deposited films, following high-temperature annealing, comprisedβ-Ga2O3. Comparing samples with and without a 20 nm seed layer, it was found that the former exhibited fewer oxygen defects and substantially improved crystal quality. The incorporation of the seed layer led to the realization of detectors with remarkably low dark current (≤15.3 fA). Moreover, the photo-to-dark current ratio was enhanced by 30% (surpassing 1.3 × 104) and the response/recovery time reduced to 0.9 s/0.01 s, indicating faster performance. Furthermore, these detectors demonstrated higher responsivity (4.8 mA W-1), improved detectivity (2.49 × 1016Jones), and excellent solar-blind characteristics. This study serves as a foundational stepping toward achieving high-qualityβ-Ga2O3thin film and UV detector arrays.
Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga2O3/MgZnO Heterostructure by RF Sputtering

Jie-Si Jheng,Chun-Kai Wang,Yu-Zung Chiou,Sheng-Po Chang,Shoou-Jinn Chang

DOI: https://doi.org/10.3390/coatings10100994

IF: 3.236

2020-10-17

Coatings

Abstract:Dual-band metal–semiconductor–metal (MSM) photodetectors (PDs) with a Ga2O3/MgZnO heterostructure were fabricated by radio frequency (RF) sputtering, which can detect ultraviolet C (UVC) and ultraviolet B (UVB) bands individually by controlling different bias voltages. A PD with the annealing temperature of Ga2O3 at 600 °C can improve the crystal quality of Ga2O3 thin film and exhibit the least persistent photoconductivity (PPC) effect. However, a PD with the annealing temperature of Ga2O3 at 600 °C cannot achieve a voltage-tunable dual-band characteristic. On the contrary, the PD without annealing can suppress the carriers from the bottom layer of MgZnO thin film at a lower bias voltage of 1 V. At this time, the peak responsivity at 250 nm was mainly dominated by the top layer of Ga2O3 thin film. Then, as the bias voltage increased to 5 V, the peak detection wavelength shifted from 250 (UVC) to 320 nm (UVB). In addition, the PD with a 25 nm–thick SiO2 layer inserted between Ga2O3 and MgZnO thin film can achieve a broader operating bias voltage range for dual-band applications.

materials science, multidisciplinary,physics, applied, coatings & films
Robust Deep UV Photodetectors Based on One‐Step‐Grown Polycrystalline Ga2O3 Film via Pulsed Laser Deposition toward Extreme‐Environment Application

Hong Huang,Haoran Yin,Keju Han,Yilin Wang,Zhiwei Wang,Xiao Feng,Yanni Zou,Xuanze Zhou,Guangwei Xu,Xiaohu Hou,Xiaolong Zhao,Shibing Long

DOI: https://doi.org/10.1002/adom.202400788

IF: 9

2024-06-18

Advanced Optical Materials

Abstract:Deep Ultraviolet (DUV) photodetectors employed in extreme conditions, e.g., flame detection and space exploration, face challenges of performance degradation caused by high/low‐temperature transformation. One‐step‐grown polycrystalline β‐Ga2O3 films are utilized for DUV detection, offering an efficient solution to develop robust DUV photodetectors with excellent photoresponse performance, high durability, and stability for extreme‐condition applications. Gallium oxide (Ga2O3), with an ultrawide bandgap corresponding to the deep ultraviolet (DUV) range, has attracted significant attention in optical filter‐free photodetectors. In practical terms, DUV photodetectors employed in extreme conditions, for example, flame detection and space exploration, face the challenges of performance degradation caused by high/low‐temperature transformation. Here, DUV photodetectors are tailored with high durability and stability by one‐step‐grown β‐Ga2O3 films via pulsed laser deposition. A high‐oxygen‐pressure scheme effectively addresses the issue of film‐free deposition at specifically high temperatures, facilitating the formation of polycrystalline high‐resistivity β‐Ga2O3 films. As a result, the devices exhibit outstanding performance, including a low dark current (4.4 pA @30 V), high photoresponsivity (147.36 A W−1), and fast response time (3.1/22.6 ms). Additionally, the photoresponse performance shows minimal degradation at high temperatures up to 300 °C and even improves at low temperatures down to −100 °C, ranking it among the most robust DUV photodetectors. The mechanism of photoresponse, involving the exciton formation, bandgap evolution, carrier‐phonon scatter, etc., is also elucidated in a wide temperature range. This work provides an efficient solution for developing robust Ga2O3 DUV photodetectors with excellent performance for extreme‐condition applications.

materials science, multidisciplinary,optics
Postannealed (GaIn) 2 O 3 Films Deposited by Sputtering for Ultraviolet Photodetection

Fabi Zhang,Tingbo He,Juan Zhou,Haizheng Hu,Daoyou Guo,Haiou Li,Xinpeng Liu,Peihua Wangyang,Tangyou Sun

DOI: https://doi.org/10.1021/acsaelm.2c00704

IF: 4.494

2022-09-14

ACS Applied Electronic Materials

Abstract:In this work, we demonstrated that thermal-annealed (GaIn)2O3 films deposited by sputtering can be used for UV detector applications. X-ray diffractometer measurement shows that the (GaIn)2O3 film annealed at 900 °C possesses the best crystal orientation. All annealed (GaIn)2O3 films have a high transmittance of over 80% in the visible light region measured by a spectrometer. The photoresponse of the (GaIn)2O3 film-based photodetectors was affected by the annealing temperature. A film annealed at 800 °C possesses high photosensitivity (2.5 × 104), high photoresponsivity (16.9 A/W), as well as high detectivity (3.11 × 1011 Hz1/2 W–1) at 5 V bias under 254 nm illumination. The photoresponsivity has been improved through thermal annealing. However, further increasing the annealing temperature from 700 to 1100 °C decreased the photoresponsivity. The decay/rise time reduced obviously after thermal annealing. Both the variation of photoresponsivity and response time should concern with the variation of oxygen vacancies. This work is helpful for the preparation of a (GaIn)2O3-based ultraviolet photodetector and the improvement of its response speed and responsivity.

materials science, multidisciplinary,engineering, electrical & electronic
Characteristics of Ga-doped ZnO Thin-Film Ultraviolet Photodetectors Fabricated on Patterned Si Substrate

R. X. Wang,C. Y. Wu,Q. Peng,X. T. Ge,J. Q. Ning,S. J. Xu,Q. Sun,R. Huang,Z. L. Huang,W. Q. Zhu,H. Yang

DOI: https://doi.org/10.1088/1361-6641/ab5159

IF: 2.048

2019-01-01

Semiconductor Science and Technology

Abstract:Ultraviolet (UV) photodetectors have demonstrated wide applications in both civil and military fields such as pollution monitoring and missile warning. ZnO-based UV photodetectors have attracted tremendous attention due to the advantages of low cost and high chemical and thermal stability. In this work, Ga-doped ZnO (GZO) films were grown with the technique of RF magnetron sputtering and metal–semiconductor–metal (MSM) UV detectors were fabricated with the GZO films as the active detection layers. The as-sputtered films were further treated by the means of thermal annealing such that reduced oxygen vacancy and improved crystallization were achieved for the films. The effect of patterned Si substrates on the GZO UV detectors performance was revealed for the first time. With optimized annealing temperature and delicately designed substrate patterns, the responsibility of GZO MSM photodetectors has been greatly enhanced (e.g. about 2.5-folds higher than ones fabricated on non-patterned Si substrate). Our work on the GZO material and the structural design may pave a new way towards developing low-cost but high-performance UV detectors.
Influence of annealing pretreatment in different atmospheres on crystallization quality and UV photosensitivity of gallium oxide films

Wen-Jie Chen,Hong-Ping Ma,Lin Gu,Yi Shen,Ruo-Yun Yang,Xi-Yuan Cao,Mingyang Yang,Qing-Chun Zhang

DOI: https://doi.org/10.1039/d3ra07568k

2024-02-02

Abstract:Due to their high wavelength selectivity and strong anti-interference capability, solar-blind UV photodetectors hold broad and important application prospects in fields like flame detection, missile warnings, and secure communication. Research on solar-blind UV detectors for amorphous Ga2O3 is still in its early stages. The presence of intrinsic defects related to oxygen vacancies significantly affects the photodetection performance of amorphous Ga2O3 materials. This paper focuses on growing high quality amorphous Ga2O3 films on silicon substrates through atomic layer deposition. The study investigates the impact of annealing atmospheres on Ga2O3 films and designs a blind UV detector for Ga2O3. Characterization techniques including atomic force microscopy (AFM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) are used for Ga2O3 film analysis. Ga2O3 films exhibit a clear transition from amorphous to polycrystalline after annealing, accompanied by a decrease in oxygen vacancy concentration from 21.26% to 6.54%. As a result, the response time of the annealed detector reduces from 9.32 s to 0.47 s at an external bias of 10 V. This work demonstrates that an appropriate annealing process can yield high-quality Ga2O3 films, and holds potential for advancing high-performance solar blind photodetector (SBPD) development.
Effects of sputtering pressure and oxygen partial pressure on amorphous Ga2O3 film-based solar-blind ultraviolet photodetectors

Keyun Gu,Zilong Zhang,Ke Tang,Jian Huang,Meiyong Liao,Linjun Wang

DOI: https://doi.org/10.1016/j.apsusc.2022.154606

IF: 6.7

2022-12-01

Applied Surface Science

Abstract:The coupling of Ga2O3 film with Si substrate is in favor of the development of high integration of Ga2O3-based UV photodetector. However, it is difficult in growing the high-quality crystalline Ga2O3 due to the high temperature and uncontrol growth process. In this work, the amorphous Ga2O3 (a-Ga2O3) films are deposited on Si substrates through tailoring the sputtering pressure and oxygen partial pressure to fabricate solar blind UV detectors. The results reveal that the high sputtering pressure and non-oxygen condition increase the oxygen vacancy concentration of a-Ga2O3 films. The existence of oxygen vacancy is beneficial to enhancing the internal gain of as-grown a-Ga2O3 films under UV light illumination. The UV photodetector based on the a-Ga2O3 film grown under 100 %Ar atmosphere at 20 mTorr exhibits high photodetection performances of responsivity, external quantum efficiency, and detectivity up to 2470 mA/W, 1204.7 %, and 2.55 × 1012 cm HZ1/2 W−1 under 254 nm @30 V, respectively. Alternatively, this UV photodetector hosts a rapid photo-response speed of rise time, τr and fall time, τ d of 0.08 s and 0.157 s, respectively. This work offers a promising strategy to fabricate the a-Ga2O3-based solar blind UV detector with high photodetection performance, facile batch production and high integration with other electronics.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Combinatorial tuning of structure and optoelectronic properties of Zn-Ga-O thin films for deep ultraviolet photodetection

Yuxia Yang,Liu Wang,Shudong Hu,Dongyang Han,Simiao Wu,Zilong Wang,Wenrui Zhang,Jichun Ye

DOI: https://doi.org/10.1016/j.apsusc.2023.158031

IF: 6.7

2023-07-22

Applied Surface Science

Abstract:Ternary complex oxides exhibit strong compositional dependence on their structure and functionalities. While the profound impact of the cation stoichiometry on the physical properties of ZnGa 2 O 4 is widely recognized, how it affects the ultraviolet photodetection behavior remains not clear. Here we apply a combinatorial pulsed laser deposition technique to establish graded composition in Zn x Ga 1-x O (0 ≤ x ≤ 1) across a 2-inch sapphire substrate. In combination with structural and optical characterizations, a systematic investigation of the compositional effect on the phase, crystallinity and bandgap for the Zn x Ga 1-x O system is performed, and their further impact on the photodetection performance is compared by fabricating multiple metal–semiconductor-metal (MSM) photodetectors based on the graded Zn x Ga 1-x O films. Decent photodetection behavior is seen for the photodetectors with x ≤ 0.33, above which the performance is largely limited by the conductive phase formation. An optimized compositional range of x = 0.18–0.27 is identified to deliver the best device performance, which includes a responsivity of 12.88 A/W and a photo-to-dark current ratio of 2.8 × 10 8 . This slight zinc deficiency is considered beneficial for the formation of moderate level of oxygen vacancies or antisite defects that boosts carrier transport. This study sheds light on the composition-dependent evolution of structure and properties in ternary ultrawide-bandgap semiconductors for high-performance ultraviolet photodetection.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Effects of growth cycle number and annealing temperature on Ga2O3-on-quartz solar-blind photodetectors

Shaoqing Wang,Yan Zhao,Nini Cheng,Yongtao Ren,Xiangtai Liu,Lijun Li,Yifan Jia,Yunhe Guan,Haifeng Chen,Songang Peng

DOI: https://doi.org/10.1016/j.matchemphys.2023.128037

IF: 4.778

2023-09-01

Materials Chemistry and Physics

Abstract:In this study, Ga2O3 thin films were deposited on quartz glass substrates by atomic layer deposition technique followed by post annealing process. The influence of growth cycle number and post annealing temperature on both their material characteristics and UV photoelectric properties was studied. The crystal structure can be improved and the photo-current increases in a geometric progression with the increase of the number of cycles. In addition, the effect of annealing temperature on Ga2O3-based solar-blind photodetectors have been studied. The annealing temperature was set to 400 °C, 500 °C, 600 °C, 700 °C, 800 °C and 900 °C, respectively. The surface morphology deteriorates seriously when the annealing temperature is above 600 °C, leading to the poor photoresponsivity (<1 A/W) of Ga2O3 PDs. The amorphous Ga2O3 film annealed at 400 °C in N2/Air mixture atmosphere shows the maximum disorder and minimum optical band gap, which results in the lower UV transmittance and higher photoresponsivity of 1166.6 A/W under 254 nm illumination. The results show that the Ga2O3 photoelectric detectors based on quartz substrate not only reduces the cost of solar-blind photodetectors cost, but also has excellent photoelectric performance.

materials science, multidisciplinary
Role of Interfacial Oxide in the Preferred Orientation of Ga2O3 on Si for Deep Ultraviolet Photodetectors

Chao-Chun Yen,Tsun-Min Huang,Po-Wei Chen,Kai-Ping Chang,Wan-Yu Wu,Dong-Sing Wuu

DOI: https://doi.org/10.1021/acsomega.1c04380

IF: 4.1

2021-10-19

ACS Omega

Abstract:It is generally known that a layer of amorphous silicon oxide (SiO2) naturally exists on the surface of silicon, resulting in the growth of gallium oxide (Ga2O3) that is no longer affected by substrate crystallinity during sputtering. This work highlights the formation energy between the native amorphous nano-oxide film formed on the Si substrate and monoclinic β-Ga2O3 dominating the preferred orientation prepared for deep ultraviolet photodetectors. The latter were deposited on p-type silicon (p-Si) with (111) orientation using radio frequency sputtering at 600 °C and post rapid thermal annealing (RTA). The X-ray diffraction (XRD) results indicate both as-deposited and postannealing films with the (400) preferred orientation for a layer thickness of 100 nm. However, slight random orientation with the amorphous structure is mixed in the preferred one for the as-deposited film with a thickness of 200 nm and reduced after being annealed at 800 °C, which is observed by XRD and transmission electron microscopy. Meanwhile, thermal-induced massive twin boundaries (TBs) and stacking faults (SFs) were generated when annealed at 1000 °C, owing to the relaxation of lattice strain by the coherent interface. The interfacial bonding energy per unit area (E i) between β-Ga2O3 films with various facets ((001), (010), (100), and (2̅01)) and amorphous SiO2 was calculated using density functional theory. The E i of β-Ga2O3 (100)/SiO2 reveals the highest value (0.289 eV/Å2), which is consistent with the (100) preferred orientation of deposited films. The (100) preferred orientation is the driving force for TBs and SFs. The discrimination of responsivities and the photo/dark current contrast ratio (I ph/I dark) are inversely proportional to the amorphous structure, grain boundaries, TBs, and SFs. Therefore, optimum metal-semiconductor-metal photodetector performance is achieved for RTA-treated samples at 800 °C with an I ph/I dark of 3.91 × 102 and a responsivity of 0.702 A/W (λpeak = 230 nm) at 5 V bias for a 200 nm thin film.
Ultrasensitive UV-C detection based on MOCVD-grown highly crystalline ultrawide bandgap orthorhombic κ-Ga2O3

Namsoo Lim,Jungwook Min,Jung-Hong Min,Chun Hong Kang,Kuang-Hui Li,Tae-Yong Park,Woochul Kim,Bambar Davaasuren,Tien Khee Ng,Deok Ha Woo,Ji-Hyeon Park,Yusin Pak,Boon S. Ooi

DOI: https://doi.org/10.1016/j.apsusc.2022.155350

IF: 6.7

2023-01-30

Applied Surface Science

Abstract:Orthorhombic κ-Ga2O3, as one of the Ga2O3 polymorphs, is considered a promising as ultrawide bandgap material for extreme environment devices. It is considered more superior than the conventional group III-V compound semiconductors and silicon carbides in extreme environments demanding material/device characteristics of high-voltage, high-temperature, high-pressure, high-impact, and high-radiation. In this study, we demonstrate ultrasensitive ultraviolet-C (UV-C) detection using Si-doped orthorhombic κ-Ga2O3 photodetectors. A 150 nm thick κ-Ga2O3 film was grown on a 2-inch diameter sapphire (α–Al2O3) wafer via metal organic chemical vapor deposition (MOCVD) method. The crystallinity of orthorhombic κ-Ga2O3 film was investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The ultrawide bandgap of approximately 4.9 eV was confirmed by UV transmittance measurement. For UV-C detection analysis, a planar device with a channel length of 20 μm was fabricated using Au/Ti metal contacts on the orthorhombic κ-Ga2O3 film. The device doped under 15 sccm SiH4 flow rate showed ultrahigh photoresponse of ∼72.1 A/W, Ion/Ioff of ∼14, and decent rise (∼0.35 s) and decay (∼1.79 s). Our results will contribute to the understanding on a new material phase of κ-Ga2O3, as well as on developing optoelectronics devices with high radiation hardness suitable for operation in extreme environments.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Toward deeper ultraviolet detection: Atomic layer deposited amorphous AlGaOx thin film detector with its tunable optical properties and opto-electronic responses

Weiming Liu,Xudan Zhu,Yifan Ding,Hongyu Tang,Peiran Xu,Tiantian Huang,Yuxiang Zheng,Xin Chen,Rongjun Zhang

DOI: https://doi.org/10.1016/j.ceramint.2024.03.110

IF: 5.532

2024-03-01

Ceramics International

Abstract:Employing atomic layer deposition, AlGaOx films with varying Al concentrations (highest to 44% at.) were meticulously synthesized. Comprehensive characterization encompassing chemical composition, elemental depth distribution, structural clarity, and interface delineation unequivocally attested to the superior quality of the films. Optical properties were rigorously assessed using transmittance spectra and spectroscopic ellipsometry (SE), and optical constants across a broad spectral range (200–1000 nm) were determined through SE fitting. A consistent blue-shift in the absorption edge, observed in both the transmittance spectra and extinction coefficient, is attributed to the incorporation of aluminum. Detailed exploration via X-ray photoelectron spectroscopy fine scans of O 1s energy loss spectra and valence band analysis revealed that the evolution of the conduction band is instrumental in modulating the bandgap. To ascertain the viability for deep ultraviolet light detection, photodetectors based on AlGaOx were fabricated. Blue shifts in both photocurrent and response peak wavelength correlated with increasing Al content. In specific occasions, the AlGaOx-based detector has a responsibility of 0.05 A/W and 7×1013 detectivity of Jones. Remarkably, the detector demonstrates commendable on/off capability, characterized by fast rise and decay times of 0.26 s and 0.17 s, respectively. This study extensively examined the chemical, structural, and optical properties of amorphous AlGaOx films, alongside the optoelectronic capabilities of AlGaOx-based devices. Our research presented a viable strategy for enhanced deep ultraviolet detection, showcasing a successful implementation of amorphous bandgap engineering. This endeavor holds promise for future advancements in UV-detector development.

materials science, ceramics

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Ultrasensitive UV-C detection based on MOCVD-grown highly crystalline ultrawide bandgap orthorhombic κ-Ga2O3

Toward deeper ultraviolet detection: Atomic layer deposited amorphous AlGaOx thin film detector with its tunable optical properties and opto-electronic responses