Abstract:Ga2O3 is considered as a candidate for the preparation of solar-blind photodetectors due to its large direct band gap. Developing low-cost preparation methods of high-quality Ga2O3 films is of importance for large-scale applications. In this work, we investigate the preparation of Sn doped β-Ga2O3 films by using simple and cheap sol–gel method under ambient condition. It is found that Sn doping induces a growth mode transformation from 2¯01documentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$left( {overline{2}01} ight)$$end{document} to 3¯11documentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$left( {overline{3}11} ight)$$end{document} oriented texture on the c-plane sapphire substrates. With an optimal Sn proportion, high-quality β-Ga2O3 films consisting of needle-like grains are observed. Compared with the undoped films, the Sn-doped films with needle-like grains obtained a low dark current of 0.76 nA, performed an on/off ratio as high as ~ 6000, responsivity, R of 164 mA/W and D* of 3.21 × 1012 Jones at a bias voltage of 30 V in the configuration of metal–semiconductor–metal solar-blind deep ultraviolet detectors. This is the highest on/off ratio of Ga2O3 solar-blind photodetectors fabricated by sol–gel method reported up to now and has the potential to be applied in practical use.Graphical abstract

Effect of oxygen flow ratio on the performance of RF magnetron sputtered Sn-doped Ga2O3 films and ultraviolet photodetector

Preparation of Sn-Doped Ga2O3 Thin Films and MSM Ultraviolet Detectors Using Magnetron Co-Sputtering

Influence of Si flow rate on the performance of MOCVD-deposited Si-doped Ga 2 O 3 films and the applications in ultraviolet photodetectors

Comprehensive Enhancement of ZnGa2O4-based Solar Blind Photodetector Performance by Suppressing Defects in Oxygen-Rich Atmosphere

Influence of O2 Flow Rate on the Properties of Ga2O3 Growth by RF Magnetron Sputtering

Improved-Performance Amorphous Ga2O3 Photodetectors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering

Effects of sputtering pressure and oxygen partial pressure on amorphous Ga2O3 film-based solar-blind ultraviolet photodetectors

Interfacial Engineering of SnS/Ga2O3 Heterojunction by SnO for a High-Performance Self-Powered Solar-Blind UV Photodetector

Sol–gel preparation of Sn doped gallium oxide films for application in solar-blind ultraviolet photodetectors

The Influence of Different Partial Pressure on the Fabrication of InGaO Ultraviolet Photodetectors

Transparent conductive F-doped SnO 2 films prepared by RF reactive magnetron sputtering at low substrate temperature

Combinatorial tuning of structure and optoelectronic properties of Zn-Ga-O thin films for deep ultraviolet photodetection

Atomic-Level Sn Doping Effect in Ga2O3 Films Using Plasma-Enhanced Atomic Layer Deposition

Enhancing β-Ga2O3-film ultraviolet detectors via RF magnetron sputtering with seed layer insertion on c-plane sapphire substrate

Characteristics of Ga-doped ZnO Thin-Film Ultraviolet Photodetectors Fabricated on Patterned Si Substrate

Enhancing the Performance of ZnGa2O4 Metal-Semiconductor-metal Ultraviolet Solar-Blind Photodetectors by Surface Fluorine Plasma Sensitization

Regulation of oxygen vacancies in nitrogen-doped Ga2O3 films for high-performance MSM solar-blind UV photodetectors

Texture evolution mechanism of pulsed laser deposited in-doped Ga2O3 film affected by laser fluence and its application in solar-blind photodetector

Investigation of Ga2O3-Based Deep Ultraviolet Photodetectors Using Plasma-Enhanced Atomic Layer Deposition System

Mixed-phase β-Ga2O3 and SnO2 metal-semiconductor-metal photodetectors with extended detection range from 293 nm to 330 nm