Abstract:We use hybrid density functional calculations to assess n-type doping in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and charge-state transition levels of its various configurations. We also explore the impact of C and H, which are common impurities in metal-organic chemical vapor deposition (MOCVD). In Ga$_2$O$_3$, Si$_{Ga}$ is an effective shallow donor, but in Al$_2O_3$ Si$_{Al}$ acts as a DX center with a (+/-) transition level in the band gap. Interstitial H acts as a shallow donor in Ga$_2$O$_3$, but behaves as a compensating acceptor in n-type Al$_2O_3$. Interpolation indicates that Si is an effective donor in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ up to 70% Al, but it can be compensated by H already at 1% Al. We also assess the diffusivity of H and study complex formation. Si$_{cation}$-H complexes have relatively low binding energies. Substitutional C on a cation site acts as a shallow donor in Ga$_2$O$_3$, but can be stable in a negative charge state in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ when x>5%. Substitutional C on an O site (C$_O$) always acts as an acceptor in n-type (Al$_x$Ga$_{1-x}$)$_2$O$_3$, but will incorporate only under relatively O-poor conditions. C$_O$-H complexes can actually incorporate more easily, explaining observations of C-related compensation in Ga$_2$O$_3$ grown by MOCVD. We also investigate C$_{cation}$-H complexes, finding they have high binding energies and act as compensating acceptors when x>56%; otherwise the H just passivates the unintentional C donors. C-H complex formation explains why MOCVD grown Ga$_2$O$_3$ can exhibit record-low free-carrier concentrations, in spite of the unavoidable incorporation of C. Our study highlights that, while Si is a suitable shallow donor in ALGO alloys, control of unintentional impurities is essential to avoid compensation.

Unintentional Doping Effect in Si-doped MOCVD Β-Ga2o3 Films:Shallow Donor States

Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

Precise control of the microstructural, optical, and electrical properties of ultrathin Ga2O3 film through nanomixing with few atom-thick SiO2 interlayer via plasma enhanced atomic layer deposition

Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$-Ga2O3

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties

Doping induced indirect-to-direct bandgap transition of two-dimensional Ga2O3

Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Record-High Electron Mobility and Controlled Low 10$^{15}$ cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Indium Doping-Assisted Monolayer Ga2O3 Exfoliation for Performance-Enhanced MOSFETs.

Undoped β-Ga 2 O 3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Role of carbon and hydrogen in limiting $n$-type doping of monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$

Characterizations on the Doping of Single-Crystal Silicon Carbide

Enhancing the Electron Mobility in Si-doped (010) $β$-Ga$_2$O$_3$ films with Low-Temperature Buffer Layers

Enhancement-mode Ga2O3 FETs with an unintentionally doped (001) β-Ga2O3 channel layer grown by metal-organic chemical vapor deposition

Influence of Si flow rate on the performance of MOCVD-deposited Si-doped Ga 2 O 3 films and the applications in ultraviolet photodetectors

Probing charge transport and background doping in MOCVD grown (010) $β$-Ga$_{2}$O$_{3}$

Doping Si, Mg and Ca into GaN based on plasma stimulated room-temperature diffusion

Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition