Ga2O3 Thin Films Grown on Sapphire by Atmospheric Pressure MOCVD
DAI Jiang-nan,WANG Li,FANG Wen-qing,PU Yong,LI Fan,ZHENG Chang-da,LIU Wei-hua,JIANG Feng-yi
DOI: https://doi.org/10.3321/j.issn:1000-7032.2006.03.027
2006-01-01
Chinese Journal of Luminescence
Abstract:Gallium oxide(Ga_2O_3),a wide direct-gap semiconductor(E_g≈4.9 eV),has recently attracted interests as a new material for a gas sensor,transparent conductor,luminescent phosphors,solar cells,electronic and optoeclectonic applications.For Ga_2O_3 films growth,numerous deposition techniques including sputtering,electron-beam evaporation,molecular beam epitaxy(MBE),pulse-laser deposition(PLD),and metal organic chemical vapor deposition(MOCVD) have been employed.Among these techniques,MOCVD has many advantages for volume production and it has been proved to be excellent growth technique for Ⅲ-Ⅴs especially for the nitrides.Ga_2O_3 films used in this study were grown by a home-built vertical atmospheric pressure MOCVD system.Deionized water and trimethylgallium(TMGa) were used as the O and Ga sources,respectively,using nitrogen as the carrier gas.Typical growth conditions were as follows: chamber pressure was 103.3 kPa.The thickness of buffer layer is about 15 nm,growth temperature was 500 ℃,epilayer growth temperature was 700 ℃,and a total carrier gas flow rate was about 15 000 sccm.The thickness of the Ga_2O_3 layer was about 2 μm.Ga_2O_3 epilayer characteristics were investigated by AFM,X-ray diffraction(XRD) and secondary ion mass spectroscopy(SIMS).The results of AFM indicated the Ga_2O_3 films grew up with columniation shape and the structure was relatively compact.The root mean square(RMS) roughness as determined by AFM(30 μm×30 μm) of the film surface was about 40 nm.The Ga_2O_3 grain size was about 30～40 nm determined by AFM.X-ray diffraction spectrum showed that the FWHM of(1-02) diffraction peak was 0.25°,which indicated the good quality of βGa_2O_3 film.The Ga_2O_3 grain size was calculated about 32 nm by Scherrer's formula,which was consistent with the result of AFM.The results of SIMS showed that the Ga_2O_3 epitaxial films had good purity.