Abstract:CdO-Ga 2 O 3 alloy films (Cd 1-x Ga x O 1+δ ) over the whole composition range (x=0 to 1) were synthesized by room temperature radio frequency magnetron sputtering. We found that the intrinsic band gap of these alloys can be tuned in a wide range from 2.2 to 4.8 eV. As the Ga content increases to x>0.3 the alloy becomes entirely amorphous and the resistivity increases from 10 -3 to 10 -1 ohm-cm while the mobility decreases gradually from 15 (x=0.34) to 10 cm 2 /Vs (x=0.6). The resistivity of amorphous Cd 1-x Ga x O 1+δ films can be further controlled from 10 -3 to 10 2 ohm-cm by oxygen doping. Moreover, alloy films grown on plastic (PEN) substrate exhibit similar electrical and optical properties. These results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films can potentially be used as highly conducting transparent conductors on flexible solar cells as well as gate electrodes with a wide bandgap tunabilty for transparent/flexible devices.

Investigation of Solution-Processed Ga2O3 Thin Films and Their Application in Dielectric Materials

Transparent conducting amorphous CdO-Ga<inf>2</inf>O<inf>3</inf> films synthesized by room temperature sputtering

Transparent conducting amorphous CdO-Ga 2 O 3 films synthesized by room temperature sputtering

Chemical, Optical, and Electrical Characterization of Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Thickness Dependent Optical Properties of Amorphous/polycrystalline Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Examination of proper impurity doping and annealing conditions for solution processed Ga2O3 thin films

Deep UV transparent conductive Si-doped Ga2O3 thin films grown on Al2O3 substrates

Compact Ga2O3 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition at Low Temperature

Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition

Investigation of the Structural, Electrical, and Optical Properties of the Nano-Scale GZO Thin Films on Glass and Flexible Polyimide Substrates

Solution-processed amorphous gallium oxide gate dielectric for low-voltage operation oxide thin film transistors

Precise control of the microstructural, optical, and electrical properties of ultrathin Ga2O3 film through nanomixing with few atom-thick SiO2 interlayer via plasma enhanced atomic layer deposition

Effect of Process Conditions on the Transparent Conductive Properties Ga-Doped Thin Films

Investigations of the growth and physical characteristics of ZNF2-DOPED GA2O3 thin films

Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga2O3 films sputtered on silicon

Structural, optical and morphological evolution of Ga2O3/Al2O3 (0001) films grown at various temperatures by pulsed laser deposition

Preparation of High-Thickness n−-Ga2O3 Film by MOCVD

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Investigation of properties of Ta-doped Ga2O3 films prepared with seed layers

Temperature Dependence of Ultrathin Mixed-Phase Ga2O3 Films Grown on the α-Al2O3 Substrate via Mist-CVD

Atomic-Level Sn Doping Effect in Ga2O3 Films Using Plasma-Enhanced Atomic Layer Deposition