Abstract:A series of β-Ga2O3 films were prepared on polished Al2O3 substrates by pulsed laser deposition at temperatures between 580 and 780 °C were characterized by X-ray diffraction, atomic force microscope, scanning electron microscope, spectrophotometer, and spectrofluorometer. As the growth temperature increases, the phase changed from amorphous to polycrystalline β-Ga2O3 structure, the thickness of β-Ga2O3 films decreases from 173 to 137 nm, and the average grain size increases from 14.2 to 34.7 nm. The band gap of β-Ga2O3 film deposited at 780 °C is calculated to be 4.88 eV which is close to the Ga2O3 bulk. The photoluminescence intensity increases with the increasing growth temperature and the spectra can be divided into four emission bands located at UV and blue region, which are due to the recombination of self-strapped holes at O(1) sites and between two (O)2-s sites, and tunneling-trapped holes from <svg xmlns:xlink="http://www.w3.org/1999/xlink" width="4.25ex" height="3.343ex" style="vertical-align: -1.005ex;" viewBox="0 -1006.6 1829.7 1439.2" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMATHI-56" x="0" y="0"></use><g transform="translate(825,410)"> <use transform="scale(0.707)" xlink:href="#MJMAIN-32" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMAIN-2212" x="500" y="0"></use></g><g transform="translate(583,-327)"> <use transform="scale(0.707)" xlink:href="#MJMAIN-47"></use> <use transform="scale(0.707)" xlink:href="#MJMAIN-61" x="785" y="0"></use></g></g></svg> at Ga(1) tetrahedral sites.<svg xmlns="http://www.w3.org/2000/svg" style="display: none;"><defs id="MathJax_SVG_glyphs"><path stroke-width="1" id="MJMATHI-56" d="M52 648Q52 670 65 683H76Q118 680 181 680Q299 680 320 683H330Q336 677 336 674T334 656Q329 641 325 637H304Q282 635 274 635Q245 630 242 620Q242 618 271 369T301 118L374 235Q447 352 520 471T595 594Q599 601 599 609Q599 633 555 637Q537 637 537 648Q537 649 539 661Q542 675 545 679T558 683Q560 683 570 683T604 682T668 681Q737 681 755 683H762Q769 676 769 672Q769 655 760 640Q757 637 743 637Q730 636 719 635T698 630T682 623T670 615T660 608T652 599T645 592L452 282Q272 -9 266 -16Q263 -18 259 -21L241 -22H234Q216 -22 216 -15Q213 -9 177 305Q139 623 138 626Q133 637 76 637H59Q52 642 52 648Z"></path><path stroke-width="1" id="MJMAIN-32" d="M109 429Q82 429 66 447T50 491Q50 562 103 614T235 666Q326 666 387 610T449 465Q449 422 429 383T381 315T301 241Q265 210 201 149L142 93L218 92Q375 92 385 97Q392 99 409 186V189H449V186Q448 183 436 95T421 3V0H50V19V31Q50 38 56 46T86 81Q115 113 136 137Q145 147 170 174T204 211T233 244T261 278T284 308T305 340T320 369T333 401T340 431T343 464Q343 527 309 573T212 619Q179 619 154 602T119 569T109 550Q109 549 114 549Q132 549 151 535T170 489Q170 464 154 447T109 429Z"></path><path stroke-width="1" id="MJMAIN-2212" d="M84 237T84 250T98 270H679Q694 262 694 250T679 230H98Q84 237 84 250Z"></path><path stroke-width="1" id="MJMAIN-47" d="M56 342Q56 428 89 500T174 615T283 681T391 705Q394 705 400 705T408 704Q499 704 569 636L582 624L612 663Q639 700 643 704Q644 704 647 704T653 705H657Q660 705 666 699V419L660 413H626Q620 419 619 430Q610 512 571 572T476 651Q457 658 426 658Q401 658 376 654T316 633T254 592T205 519T177 411Q173 369 173 335Q173 259 192 201T238 111T302 58T370 31T431 24Q478 24 513 45T559 100Q562 110 562 160V212Q561 213 557 216T551 220T542 223T526 225T502 226T463 227H437V273H449L609 270Q715 270 727 273H735V227H721Q674 227 668 215Q666 211 666 108V6Q660 0 657 0Q653 0 639 10Q617 25 600 42L587 54Q571 27 524 3T406 -22Q317 -22 238 22T108 151T56 342Z"></path><path stroke-width="1" id="MJMAIN-61" d="M137 305T115 305T78 320T63 359Q63 394 97 421T218 448Q291 448 336 416T396 340Q401 326 401 309T402 194V124Q402 76 407 58T428 40Q443 40 448 56T453 109V145H493V106Q492 66 490 59Q481 29 455 12T400 -6T353 12T329 54V58L327 55Q325 52 322 49T314 40T302 29T287 17T269 6T247 -2T221 -8T190 -11Q130 -11 82 20T34 107Q34 128 41 147T68 188T116 225T194 253T304 268H318V290Q318 324 312 340Q290 411 215 411Q197 411 181 410T156 406T148 403Q170 388 170 359Q170 334 154 320ZM126 106Q126 75 150 51T209 26Q247 26 276 49T315 109Q317 116 318 175Q318 233 317 233Q309 233 296 232T251 223T193 203T147 166T126 106Z"></path></defs></svg>

Characterization of β-Ga2O3 films deposited under different growth temperature by pulsed laser deposition

Microstructure, Optical, and Photoluminescence Properties of Β-Ga2o3 Films Prepared by Pulsed Laser Deposition under Different Oxygen Partial Pressures*

Structural, optical and morphological evolution of Ga2O3/Al2O3 (0001) films grown at various temperatures by pulsed laser deposition

Chemical, Optical, and Electrical Characterization of Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Compact Ga2O3 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition at Low Temperature

Temperature Dependence of Ultrathin Mixed-Phase Ga2O3 Films Grown on the α-Al2O3 Substrate via Mist-CVD

Investigation of Β‐ga2o3 Film Growth Mechanism on C‐plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Atomic-scale investigation of $γ$-Ga$_2$O$_3$ deposited on MgAl$_2$O$_4$ and its relationship with $β$-Ga$_2$O$_3$

Effects of Growth Temperature on Phase Transformation and Crystal Quality of Ga2O3 Films Grown on Si/AlN Composite Substrates by MOCVD

MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate

Identification and modulation of electronic band structures of single-phase β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> alloys grown by laser molecular beam epitaxy

Exploration of Β-(Al X Ga 1− X ) 2 O 3 Thin Films at Different Deposition Thicknesses by Magnetron Sputtering

Temperature-dependent oxygen annealing effect on the properties of Ga2O3 thin film deposited by atomic layer deposition

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Effect of epitaxial growth rate on morphological, structural and optical properties of β-Ga2O3 films prepared by MOCVD

Thickness Dependent Optical Properties of Amorphous/polycrystalline Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

The Photoluminescence Properties of β-Ga2O3 Thin Films

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

Optical and electronic properties of (Al Ga1−)2O3/Al2O3 (x>0.4) films grown by magnetron sputtering

(Digital Presentation) MOCVD Growth of Ga2O3, Algao and Heterostructures