Abstract:Nominally phase-pure $\gamma$-$Ga_2O_3$ was deposited on (100) $MgAl_2O_4$ within a narrow temperature window centered at $\sim$470 $^{\circ}$C using metal-organic chemical vapor deposition (MOCVD). The film deposited at 440 $^{\circ}$C exhibited either poor crystallization or an amorphous structure; the film grown at 500 $^{\circ}$C contained both $\beta$-$Ga_2O_3$ and $\gamma$-$Ga_2O_3$. A nominally phase-pure $\beta$-$Ga_2O_3$ film was obtained at 530 $^{\circ}$C. Atomic-resolution scanning transmission electron microscopy (STEM) investigations of the $\gamma$-$Ga_2O_3$ film grown at 470 $^{\circ}$C revealed a high density of antiphase boundaries. A planar defect model developed for $\gamma$-$Al_2O_3$ was extended to explain the stacking sequences of the Ga sublattice observed in the STEM images of $\gamma$-$Ga_2O_3$. The presence of the 180$^{\circ}$ rotational domains and 90$^{\circ}$ rotational domains of $\beta$-$Ga_2O_3$ inclusions within the $\gamma$-$Ga_2O_3$ matrix is discussed within the context of a comprehensive investigation of the epitaxial relationship between those two phases in the as-grown film at 470 $^{\circ}$C and the same film annealed at 600 $^{\circ}$C. The results led to the hypotheses that (i) incorporation of certain dopants including Si, Ge, Sn, Mg, Al, and Sc, into $\beta$-$Ga_2O_3$, locally stabilizes the "$\gamma$-phase" and (ii) the site preference(s) for these dopants promotes the formation of the "$\gamma$-phase" and/or $\gamma$-$Ga_2O_3$ solid solutions. However, in the absence of such dopants, pure $\gamma$-$Ga_2O_3$ remains the least stable $Ga_2O_3$ polymorph, as indicated by its very narrow growth window, lower growth temperatures relative to other $Ga_2O_3$ polymorphs, and the largest calculated difference in Helmholtz free energy per formula unit between $\gamma$-$Ga_2O_3$ and $\beta$-$Ga_2O_3$ than all other polymorphs.

What problem does this paper attempt to address?

The main problem this paper attempts to address is understanding the relationship between γ-Ga₂O₃ films grown at specific temperatures and β-Ga₂O₃ through atomic-scale research, as well as the types of defects present within the γ-Ga₂O₃ films and their impact on material properties. Specifically, the researchers focus on the following aspects: 1. **Determination of Growth Window**: By using Metal-Organic Chemical Vapor Deposition (MOCVD) to grow γ-Ga₂O₃ films on (100) MgAl₂O₄ substrates, the optimal growth temperature range was determined to be 440 ℃ to 500 ℃, with a central temperature of approximately 470 ℃. 2. **Crystal Structure and Defect Analysis**: Utilizing High-Resolution Transmission Electron Microscopy (HRTEM) and Scanning Transmission Electron Microscopy (STEM) techniques, atomic-scale characterization of γ-Ga₂O₃ films grown at 470 ℃ was conducted. It was found that the films contained a large number of antiphase boundaries, which affected the crystallinity and stability of the films. 3. **Phase Transition and Doping Effects**: The phase composition of films grown at different temperatures was studied, revealing that films grown at 530 ℃ were primarily β-Ga₂O₃. Additionally, the study explored how certain doping elements (such as Si, Ge, Sn, Mg, Al, and Sc) could locally stabilize the γ-Ga₂O₃ phase and promote its formation or the generation of solid solutions. 4. **Epitaxial Relationship**: The epitaxial relationship between γ-Ga₂O₃ and β-Ga₂O₃ was studied in detail, particularly the orientation and distribution of γ-Ga₂O₃ within β-Ga₂O₃. It was found that γ-Ga₂O₃ existed in β-Ga₂O₃ in the form of 180° rotational domains and 90° rotational domains, which significantly impacted epitaxial growth and material properties. Through these studies, the authors hope to provide a theoretical foundation and technical guidance for the preparation and application of γ-Ga₂O₃ films, particularly in the fields of high-power electronic devices and deep ultraviolet photodetectors.

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