Abstract:Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure \k{appa}-Ga2O3 films are successfully grown on GaN-, AlN-on sapphire, and YSZ substrates through a systematical tuning of the growth parameters including the precursor molar flow rates, chamber pressure and growth temperature, whereas the growth on c-sapphire substrates leads to a mixture of \b{eta}- and \k{appa}polymorphs of Ga2O3 under the investigated growth conditions. The influence of the crystalline structure, surface morphology and roughness of \k{appa}-Ga2O3 films grown on different substrates are investigated as a function of precursor flow rate. High resolution scanning transmission electron microscopy (HR-STEM) imaging of \k{appa}-Ga2O3 films reveals abrupt interfaces between the epitaxial film and the sapphire, GaN and YSZ substrates. The growth of single crystal orthorhombic \k{appa}Ga2O3 films is confirmed by analyzing the STEM nano-diffraction pattern. The chemical composition, surface stoichiometry, and the bandgap energies of \k{appa}-Ga2O3 thin films grown on different substrates are studied by high resolution x-ray photoelectron spectroscopy (XPS) measurements. The type-II (staggered) band alignments at three interfaces between \k{appa}-Ga2O3 and c-sapphire, AlN, and YSZ substrates are determined by XPS, with the exception of \k{appa}-Ga2O3/GaN interface, which shows type I (straddling) band alignment.

Research on the Surface Morphology of SS-Ga2o3films with Different Growth Conditions

Investigation of β-Ga2O3 thin films grown on epi-GaN/sapphire(0001) substrates by low pressure MOCVD

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Study of β-Ga2O3 films hetero-epitaxially grown on off-angled sapphire substrates by halide vapor phase epitaxy

Research on the crystal phase and orientation of Ga2O3 Hetero-epitaxial film

Microstructural Analysis of Heteroepitaxial Β-Ga2o3 Films Grown on (0001) Sapphire by Halide Vapor Phase Epitaxy

Investigation of the surface optimization of -Ga<sub>2</sub>O<sub>3</sub> films assisted deposition by pulsed MOCVD

Single Crystalline Β-Ga2o3 Homoepitaxial Films Grown by MOCVD

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Growth Pressure Controlled Nucleation Epitaxy of Pure Phase Ε- and Β-Ga2o3 Films on Al2O3 Via Metal–Organic Chemical Vapor Deposition

Investigation of Β‐ga2o3 Film Growth Mechanism on C‐plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Effect of Growth Temperature on the Characteristics of β-Ga203 Thin Films Grown on 4H-SiC (0001) Substrates by Low Pressure Chemical Vapor Deposition

Investigation of Β-Ga 2 O 3 Films and Β-Ga 2 O 3 /gan Heterostructures Grown by Metal Organic Chemical Vapor Deposition

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition

Exploring Heteroepitaxial Growth and Electrical Properties of Α-Ga2o3 Films on Differently Oriented Sapphire Substrates

Effect of Growth Pressure on the Characteristics of Β-Ga2o3 Films Grown on GaAs (100) Substrates by MOCVD Method

Low Temperature Deposition of Ga2O3 Films on Sapphire and Epi-Gan Substrates

Growth and characterization of β-Ga<sub>2</sub>O<sub>3</sub> thin films grown on off-angled Al<sub>2</sub>O<sub>3</sub> substrates by metal-organic chemical vapor deposition

High Thickness Uniformity of 2-In. Wafer-Scale Β-Ga2o3 Films Grown by MOCVD and Photoelectrical Properties

Growth and characterization of -Ga<sub>2</sub>O<sub>3</sub> thin films grown on off-angled Al<sub>2</sub>O<sub>3</sub> substrates by metal-organic chemical vapor deposition