Effect of Growth Temperature on the Characteristics of β-Ga203 Thin Films Grown on 4H-SiC (0001) Substrates by Low Pressure Chemical Vapor Deposition

Bei Xu,Jichao Hu,Xiaomin He,Xi Wang,Dan Li,Chunlan Chen

DOI: https://doi.org/10.1109/ICET51757.2021.9450967

2021-05-07

Abstract:Herein, we report on $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$ thin films grown on 4H-SiC (0001) substrates by Low pressure chemical vapor deposition (LPCVD). The influences of growth temperature on the crystal quality, optical properties, surface morphology of $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$ films were investigated using X-ray diffraction (XRD), UltravioletVisible (UV-Vis) Scanning Spectrophotometer, Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM). It was found that the surface morphology, grain size and strain of the $\beta \mathbf{Ga} _{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$ thin films could obviously be influenced by the growth temperature in the range from 600 to $800 ^{\circ}\mathrm{C}$. The XRD results indicate that $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$textbf thin films were preferentially along the (201) oriented. At $750 ^{\circ}\mathrm{C}$, it is found that the $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3\, }}$film with relatively high crystal quality. Geometrical epitaxial relationship between the $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3\, }}$ (201) film and 4H-SiC (0001) substrate is revealed as $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$ $[010]\vert \vert 4\mathrm{H}-$SiC [1 –1 0] and $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$ $[102]\vert \vert 4\mathrm{H}-$SiC [1 1 0]. The lattice mismatch along $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$ [0 1 0] and $\beta \mathbf{Ga} _{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$ [1 0 2] direction are 0.98% and 6.5%, respectively.