Abstract:In this work, we investigated the epitaxial growth of (010) β-Ga2O3 and β-(Al x Ga1–x )2O3 films using metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) as the precursor, aiming for high growth rates for thick films. We observed pyramid-shaped defects in the β-Ga2O3 epitaxial films, characterized by polygon-shaped bumps and inverted pyramids embedded in the epi-films. To improve the surface morphology and suppress the defects formation, we developed a novel approach that incorporates a small amount of aluminum (Al) during the growth process. This addition led to significant improvements in surface morphology and reductions in both the density and size of defects for the low-Al β-(Al x Ga1–x )2O3 films, with a growth rate of 5.5 μm/h. Our findings demonstrate the effectiveness of this approach in optimizing the surface morphology of thick β-(Al x Ga1–x )2O3 films with rapid growth rates. We achieved the best surface for β-(Al x Ga1–x )2O3 in an 11 μm-thick film with approximately 2% Al composition, grown at a rate of 5.5 μm/h. However, we also observed that defect density and size increase with film thickness. Room temperature Hall measurements were used to characterize the electrical properties of the low-Al β-(Al x Ga1–x )2O3 films, which revealed a decrease in Si incorporation efficiency and room temperature mobility with increasing Al composition. Results indicated that increasing the chamber pressure led to a decrease in both growth rate and Al composition at a constant [TMAl]/[TMGa + TMAl] molar flow rate ratio. The β-(Al x Ga1–x )2O3 films (∼11 μm) with optimal surface quality were grown at chamber pressures between 60 and 100 torr. This work demonstrates the feasibility of growing (010) low-Al β-(Al x Ga1–x )2O3 thick films with high growth rates and minimal surface defects using MOCVD. Our findings provide valuable insights into β-(Al)GaO growth and suggest that introducing Al is an effective strategy for improving the surface morphology of β-(Al)GaO films. These results have important implications for the development of high-performance (Al)GaO-based vertical power devices.

Effect of Growth Pressure on the Characteristics of Β-Ga2o3 Films Grown on GaAs (100) Substrates by MOCVD Method

Effects of growth pressure on the characteristics of the -Ga<sub>2</sub>O<sub>3</sub> thin films deposited on (0001) sapphire substrates

Comparison of Ga2O3 Films Grown on M- and R-Plane Sapphire Substrates by MOCVD

Investigation of β-Ga2O3 thin films grown on epi-GaN/sapphire(0001) substrates by low pressure MOCVD

Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Investigation on the -Ga<sub>2</sub>O<sub>3</sub> deposited on off-angled sapphire (0001) substrates

Effects of Off-Axis Angles of 4H-Sic Substrates on Properties of Β-Ga2o3 Films Grown by Low-Pressure Chemical Vapor Deposition

Effect of epitaxial growth rate on morphological, structural and optical properties of β-Ga2O3 films prepared by MOCVD

MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD

Growth And Nitridation Of Beta-Ga2o3 Thin Films By Sol-Gel Spin-Coating Epitaxy With Post-Annealing Process

Influence of Growth Pressure of A Gan Buffer Layer on the Properties of Mocvd Gan

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Research on the crystal phase and orientation of Ga2O3 Hetero-epitaxial film

Temperature Dependence of $β-Ga_2O_3$ Heteroepitaxy on c-plane Sapphire using Low Pressure Chemical Vapor Deposition

Step flow growth of β-Ga2O3 films on off-axis 4H-SiC substrates by LPCVD

Microstructure, Optical, and Photoluminescence Properties of Β-Ga2o3 Films Prepared by Pulsed Laser Deposition under Different Oxygen Partial Pressures*

Growth and Characterization of Homoepitaxial $β$-Ga$_2$O$_3$ Layers

Influence of Oxygen on Β-Ga2o3 Films Deposited on Sapphire Substrates by MOCVD

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition