Effects of Off-Axis Angles of 4H-Sic Substrates on Properties of Β-Ga2o3 Films Grown by Low-Pressure Chemical Vapor Deposition

Jichao Hu,Xiaodong Yang,Jiaqi Meng,Yao Li,Bei Xu,Qi Zhang,Lei Yuan,Xiaomin He
DOI: https://doi.org/10.1016/j.apsusc.2024.161377
IF: 6.7
2025-01-01
Applied Surface Science
Abstract:In this work, beta-Ga2O3 films with (-201) preferred orientation were heteroepitaxially grown on SiC substrates with off-axis angles of 0 degrees, 4 degrees and 8 degrees by low-pressure chemical vapor deposition (LPCVD). It is found that the crystal quality, surface morphology, electrical properties of the beta-Ga2O3 films of the film are significantly sensitive to the off-axis angle of SiC substrates. The crystal quality and surface morphology of the film were significantly improved when the 4 degrees off-axis substrate was used, of which the FWHM (Full width at half maximum) was as low as 0.169 degrees and the Ra (Roughness Average) of the smooth surface was 1.98 nm. Due to the improvement of crystal quality, the Hall mobility of the films deposited on 4 degrees off-axis substrates was increased to 50.88 cm(2)/Vs. The photoluminescence peak intensity of the film increases first and then decreases with the increase of the off-axis angle of the substrate. However, the use of the off-axis substrate has no obvious effect on the oxygen vacancy ratio of the films. The results of this study demonstrate the significance for the preparation of high quality heteroepitaxial beta-Ga2O3 films on SiC substrate for the promising applications in power electronic and optoelectronic devices.
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