Abstract:Herein, we report on $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$ thin films grown on 4H-SiC (0001) substrates by Low pressure chemical vapor deposition (LPCVD). The influences of growth temperature on the crystal quality, optical properties, surface morphology of $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$ films were investigated using X-ray diffraction (XRD), UltravioletVisible (UV-Vis) Scanning Spectrophotometer, Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM). It was found that the surface morphology, grain size and strain of the $\beta \mathbf{Ga} _{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$ thin films could obviously be influenced by the growth temperature in the range from 600 to $800 ^{\circ}\mathrm{C}$. The XRD results indicate that $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$textbf thin films were preferentially along the (201) oriented. At $750 ^{\circ}\mathrm{C}$, it is found that the $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3\, }}$film with relatively high crystal quality. Geometrical epitaxial relationship between the $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3\, }}$ (201) film and 4H-SiC (0001) substrate is revealed as $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$ $[010]\vert \vert 4\mathrm{H}-$SiC [1 –1 0] and $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$ $[102]\vert \vert 4\mathrm{H}-$SiC [1 1 0]. The lattice mismatch along $\beta$-Ga$_{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$ [0 1 0] and $\beta \mathbf{Ga} _{\mathbf{2}} \mathbf{O} _{\mathbf{3}}$ [1 0 2] direction are 0.98% and 6.5%, respectively.

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Structural and optical properties of heteroepitaxial beta Ga 2O 3 films grown on MgO (100) substrates

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Characterization of Β-Ga2o3 Epitaxial Films Grown on MgO (111) Substrates by Metal-Organic Chemical Vapor Deposition

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Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Investigation of β-Ga2O3 thin films grown on epi-GaN/sapphire(0001) substrates by low pressure MOCVD

Growth and characterization of β-Ga<sub>2</sub>O<sub>3</sub> thin films grown on off-angled Al<sub>2</sub>O<sub>3</sub> substrates by metal-organic chemical vapor deposition

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Investigation of Β‐ga2o3 Film Growth Mechanism on C‐plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Effect of epitaxial growth rate on morphological, structural and optical properties of β-Ga2O3 films prepared by MOCVD

Study on the Optical Properties of Β-Ga 2 O 3 Films Grown by MOCVD

Metalorganic Vapor-Phase Epitaxy of Β-(Alxga1-x)2o3 on (201) Ga2O3 Substrates

Epitaxial growth of ?-Ga2O3 thin films on SrTiO3 (111) and (100) substrates by chemical vapor deposition

Effect of Growth Temperature on the Characteristics of β-Ga203 Thin Films Grown on 4H-SiC (0001) Substrates by Low Pressure Chemical Vapor Deposition