Abstract:Heteroepitaxy of beta-phase gallium oxide (beta-Ga2O3) thin films on foreign substrates shows promise for the development of next-generation deep ultraviolet solar blind photodetectors and power electronic devices. In this work, the influences of the film thickness and crystallinity on the thermal conductivity of ((2) over bar 01)-oriented beta-Ga2O3 heteroepitaxial thin films were investigated. Unintentionally doped beta-Ga2O3 thin films were grown on c-plane sapphire substrates with off-axis angles of 0 degrees and 6 degrees toward (11 (2) over bar0) via metal-organic vapor phase epitaxy (MOVPE) and low-pressure chemical vapor deposition. The surface morphology and crystal quality of the beta-Ga2O3 thin films were characterized using scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. The thermal conductivities of the beta-Ga2O3 films were measured via time-domain thermoreflectance. The interface quality was studied using scanning transmission electron microscopy. The measured thermal conductivities of the submicron-thick beta-Ga2O3 thin films were relatively low as compared to the intrinsic bulk value. The measured thin film thermal conductivities were compared with the Debye-Callaway model incorporating phononic parameters derived from first-principles calculations. The comparison suggests that the reduction in the thin film thermal conductivity can be partially attributed to the enhanced phonon-boundary scattering when the film thickness decreases. They were found to be a strong function of not only the layer thickness but also the film quality, resulting from growth on substrates with different offcut angles. Growth of beta-Ga2O3 films on 6 degrees offcut sapphire substrates was found to result in higher crystallinity and thermal conductivity than films grown on on-axis c-plane sapphire. However, the beta-Ga2O3 films grown on 6 degrees offcut sapphire exhibit a lower thermal boundary conductance at the beta-Ga2O3/ sapphire heterointerface. In addition, the thermal conductivity of MOVPE-grown ((2) over bar 01)-oriented beta-(AlxGal)(2)O-3 thin films with Al compositions ranging from 2% to 43% was characterized. Because of phonon-alloy disorder scattering, the beta-(AlxGa1-x)(2)O-3 films exhibit lower thermal conductivities (2.8-4.7 W/m.K) than the beta-Ga2O3 thin films. The dominance of the alloy disorder scattering in beta-(AlxGa1-x)(2)O-3 is further evidenced by the weak temperature dependence of the thermal conductivity. This work provides fundamental insight into the physical interactions that govern phonon transport within heteroepitaxially grown beta-phase Ga2O3 and (AlxGa1-x)(2)O-3 thin films and lays the groundwork for the thermal modeling and design of beta-Ga2O3 electronic and optoelectronic devices.

Structural and optical properties of heteroepitaxial beta Ga 2O 3 films grown on MgO (100) substrates

Characterization of Β-Ga2o3 Epitaxial Films Grown on MgO (111) Substrates by Metal-Organic Chemical Vapor Deposition

Structural and Optical Properties of Β-Ga2o3 Films Deposited on MgAl2O4 (1 0 0) Substrates by Metal–organic Chemical Vapor Deposition

Epitaxial Growth of Ga2O3 Thin Films on MgO (110) Substrate by Metal–organic Chemical Vapor Deposition

Synthesis of Monoclinic Structure Gallium Oxide Epitaxial Film on MgAl6O10 (100)

Characterization of Homoepitaxial Β-Ga2o3 Films Prepared by Metal–organic Chemical Vapor Deposition

Preparation and Properties of Heteroepitaxial Β-Ga2o3 Films on KTaO3 (100) Substrates by MOCVD

Single Crystalline Β-Ga2o3 Homoepitaxial Films Grown by MOCVD

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Β- Ga 2 O 3 Epitaxial Films Deposited on Epi-Gan/sapphire (0001) Substrates by MOCVD

Structural and optical properties of Ga2O3:In films deposited on MgO (100) substrates by MOCVD

Research on the crystal phase and orientation of Ga2O3 Hetero-epitaxial film

Metalorganic Vapor-Phase Epitaxy of Β-(Alxga1-x)2o3 on (201) Ga2O3 Substrates

Investigation of Β‐ga2o3 Film Growth Mechanism on C‐plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Investigation of Β-Ga 2 O 3 Films and Β-Ga 2 O 3 /gan Heterostructures Grown by Metal Organic Chemical Vapor Deposition

Microstructural Analysis of Heteroepitaxial Β-Ga2o3 Films Grown on (0001) Sapphire by Halide Vapor Phase Epitaxy

Structural and optical properties of α-Ga2O3 films deposited on sapphire (1010) and (0112) substrate by MOCVD

Epitaxial growth of ?-Ga2O3 thin films on SrTiO3 (111) and (100) substrates by chemical vapor deposition

Thermal Conductivity Of Beta-Phase Ga2o3 And (Ai(X)Ga(1-X))(2)O-3 Heteroepitaxial Thin Films

Growth and characterization of -Ga<sub>2</sub>O<sub>3</sub> thin films grown on off-angled Al<sub>2</sub>O<sub>3</sub> substrates by metal-organic chemical vapor deposition