Abstract:Gallium oxide (Ga2O3) films were grown on epi-GaN/sapphire (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method, followed by a post-deposition thermal annealing at different temperatures of 800, 900 and 1000℃ for one hour in air. X-ray diffraction (XRD, both θ~2θ and Φ scans) and transmission electron microscopy (TEM) were used to inspect the lattice structure and epitaxial relationship. With the increase of annealing temperature, the film structure changed from amorphous to single crystalline and then to polycrystalline. A single crystalline β-Ga2O3 film with the best crystalline quality was obtained under the annealing condition at 900℃, and a clear epitaxial relationship of β-Ga2O3(100)‖GaN(0001) with β-Ga2O3 < 010 > ‖GaN < 1¯21¯0 > and β-Ga2O3 < 001 > ‖GaN < 1¯010 > was determined. The elemental composition and proportion of the 900℃-annealed film were investigated by the X-ray photoelectron spectroscopy (XPS) measurements and the atomic ratio of Ga/O was about 0.69, which was close to stoichiometric Ga2O3. For the sample annealed at 900℃, the average transmittance in the visible wavelength region was about 78% and the average reflectivity in the 200–800nm wavelength range was about 18%.

Characterization of Homoepitaxial Β-Ga2o3 Films Prepared by Metal–organic Chemical Vapor Deposition

Characterization of Β-Ga2o3 Epitaxial Films Grown on MgO (111) Substrates by Metal-Organic Chemical Vapor Deposition

Structural and Optical Properties of Β-Ga2o3 Films Deposited on MgAl2O4 (1 0 0) Substrates by Metal–organic Chemical Vapor Deposition

Single Crystalline Β-Ga2o3 Homoepitaxial Films Grown by MOCVD

Structural and optical properties of heteroepitaxial beta Ga 2O 3 films grown on MgO (100) substrates

Characterization of Single Crystal Β-Ga2o3 Films Grown on SrTiO3 (100) Substrates by MOCVD

Preparation and Properties of Heteroepitaxial Β-Ga2o3 Films on KTaO3 (100) Substrates by MOCVD

Β- Ga 2 O 3 Epitaxial Films Deposited on Epi-Gan/sapphire (0001) Substrates by MOCVD

Epitaxial Growth of Ga2O3 Thin Films on MgO (110) Substrate by Metal–organic Chemical Vapor Deposition

Study on the Optical Properties of Β-Ga 2 O 3 Films Grown by MOCVD

Synthesis of Monoclinic Structure Gallium Oxide Epitaxial Film on MgAl6O10 (100)

Effect of epitaxial growth rate on morphological, structural and optical properties of β-Ga2O3 films prepared by MOCVD

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Investigation of Β‐ga2o3 Film Growth Mechanism on C‐plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Research on the crystal phase and orientation of Ga2O3 Hetero-epitaxial film

Effect of annealing on the structural and optical properties of β-Ga2O3 films prepared on gadolinium gallium garnet (110) by MOCVD

Characterization of Β-Ga2o3 Thin Films on Sapphire (0001) Using Metal-Organic Chemical Vapor Deposition Technique

Metalorganic Vapor-Phase Epitaxy of Β-(Alxga1-x)2o3 on (201) Ga2O3 Substrates

Structural and optical properties of α-Ga2O3 films deposited on sapphire (1010) and (0112) substrate by MOCVD

Effect Of Annealing On The Structural And Optical Properties Of Beta-Ga2o3 Films Prepared On Gadolinium Gallium Garnet (110) By Mocvd

Structural and Optical Properties of Α-Ga2o3 Films Deposited on Sapphire (10‾10) and (01‾12) Substrate by MOCVD