Abstract:Heteroepitaxy of beta-phase gallium oxide (beta-Ga2O3) thin films on foreign substrates shows promise for the development of next-generation deep ultraviolet solar blind photodetectors and power electronic devices. In this work, the influences of the film thickness and crystallinity on the thermal conductivity of ((2) over bar 01)-oriented beta-Ga2O3 heteroepitaxial thin films were investigated. Unintentionally doped beta-Ga2O3 thin films were grown on c-plane sapphire substrates with off-axis angles of 0 degrees and 6 degrees toward (11 (2) over bar0) via metal-organic vapor phase epitaxy (MOVPE) and low-pressure chemical vapor deposition. The surface morphology and crystal quality of the beta-Ga2O3 thin films were characterized using scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. The thermal conductivities of the beta-Ga2O3 films were measured via time-domain thermoreflectance. The interface quality was studied using scanning transmission electron microscopy. The measured thermal conductivities of the submicron-thick beta-Ga2O3 thin films were relatively low as compared to the intrinsic bulk value. The measured thin film thermal conductivities were compared with the Debye-Callaway model incorporating phononic parameters derived from first-principles calculations. The comparison suggests that the reduction in the thin film thermal conductivity can be partially attributed to the enhanced phonon-boundary scattering when the film thickness decreases. They were found to be a strong function of not only the layer thickness but also the film quality, resulting from growth on substrates with different offcut angles. Growth of beta-Ga2O3 films on 6 degrees offcut sapphire substrates was found to result in higher crystallinity and thermal conductivity than films grown on on-axis c-plane sapphire. However, the beta-Ga2O3 films grown on 6 degrees offcut sapphire exhibit a lower thermal boundary conductance at the beta-Ga2O3/ sapphire heterointerface. In addition, the thermal conductivity of MOVPE-grown ((2) over bar 01)-oriented beta-(AlxGal)(2)O-3 thin films with Al compositions ranging from 2% to 43% was characterized. Because of phonon-alloy disorder scattering, the beta-(AlxGa1-x)(2)O-3 films exhibit lower thermal conductivities (2.8-4.7 W/m.K) than the beta-Ga2O3 thin films. The dominance of the alloy disorder scattering in beta-(AlxGa1-x)(2)O-3 is further evidenced by the weak temperature dependence of the thermal conductivity. This work provides fundamental insight into the physical interactions that govern phonon transport within heteroepitaxially grown beta-phase Ga2O3 and (AlxGa1-x)(2)O-3 thin films and lays the groundwork for the thermal modeling and design of beta-Ga2O3 electronic and optoelectronic devices.

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Investigation on High Quality Ultra-Wide Band Gap Β-Ga2o3/aln Heterostructure Grown by Metal Organic Chemical Vapor Deposition

Heteroepitaxial Growth and Band Alignment of Β-Ga2o3 on GaN Substrate Grown by Non-Vacuum Mist-Cvd

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Study of β-Ga2O3 films hetero-epitaxially grown on off-angled sapphire substrates by halide vapor phase epitaxy

Microstructural Analysis of Heteroepitaxial Β-Ga2o3 Films Grown on (0001) Sapphire by Halide Vapor Phase Epitaxy

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Heteroepitaxial growth of -Ga<sub>2</sub>O<sub>3</sub> thin films on c-plane sapphire substrates with -(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> intermediate buffer layer by mist-CVD method

Investigation of β-Ga2O3 thin films grown on epi-GaN/sapphire(0001) substrates by low pressure MOCVD

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Heteroepitaxy of ε-Ga2O3 thin films grown on AlN/Si(1 1 1) templates by metal–organic chemical vapor deposition

Research on the crystal phase and orientation of Ga2O3 Hetero-epitaxial film

Epitaxial growth of a β-Ga2O3 (−201)-oriented thin film on a threefold symmetrical SrTiO3 (111) substrate for heterogeneous integration

Epitaxial growth of β-Ga2O3 thin films on SrTiO3 (1 1 1) and (1 0 0) substrates by chemical vapor deposition

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Thermal Conductivity Of Beta-Phase Ga2o3 And (Ai(X)Ga(1-X))(2)O-3 Heteroepitaxial Thin Films

Catalyst-assisted heteroepitaxial strategy for highly ordered β-Ga 2 O 3 nanoarrays and their optical property investigation

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition