Abstract:Heteroepitaxy of beta-phase gallium oxide (beta-Ga2O3) thin films on foreign substrates shows promise for the development of next-generation deep ultraviolet solar blind photodetectors and power electronic devices. In this work, the influences of the film thickness and crystallinity on the thermal conductivity of ((2) over bar 01)-oriented beta-Ga2O3 heteroepitaxial thin films were investigated. Unintentionally doped beta-Ga2O3 thin films were grown on c-plane sapphire substrates with off-axis angles of 0 degrees and 6 degrees toward (11 (2) over bar0) via metal-organic vapor phase epitaxy (MOVPE) and low-pressure chemical vapor deposition. The surface morphology and crystal quality of the beta-Ga2O3 thin films were characterized using scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. The thermal conductivities of the beta-Ga2O3 films were measured via time-domain thermoreflectance. The interface quality was studied using scanning transmission electron microscopy. The measured thermal conductivities of the submicron-thick beta-Ga2O3 thin films were relatively low as compared to the intrinsic bulk value. The measured thin film thermal conductivities were compared with the Debye-Callaway model incorporating phononic parameters derived from first-principles calculations. The comparison suggests that the reduction in the thin film thermal conductivity can be partially attributed to the enhanced phonon-boundary scattering when the film thickness decreases. They were found to be a strong function of not only the layer thickness but also the film quality, resulting from growth on substrates with different offcut angles. Growth of beta-Ga2O3 films on 6 degrees offcut sapphire substrates was found to result in higher crystallinity and thermal conductivity than films grown on on-axis c-plane sapphire. However, the beta-Ga2O3 films grown on 6 degrees offcut sapphire exhibit a lower thermal boundary conductance at the beta-Ga2O3/ sapphire heterointerface. In addition, the thermal conductivity of MOVPE-grown ((2) over bar 01)-oriented beta-(AlxGal)(2)O-3 thin films with Al compositions ranging from 2% to 43% was characterized. Because of phonon-alloy disorder scattering, the beta-(AlxGa1-x)(2)O-3 films exhibit lower thermal conductivities (2.8-4.7 W/m.K) than the beta-Ga2O3 thin films. The dominance of the alloy disorder scattering in beta-(AlxGa1-x)(2)O-3 is further evidenced by the weak temperature dependence of the thermal conductivity. This work provides fundamental insight into the physical interactions that govern phonon transport within heteroepitaxially grown beta-phase Ga2O3 and (AlxGa1-x)(2)O-3 thin films and lays the groundwork for the thermal modeling and design of beta-Ga2O3 electronic and optoelectronic devices.

Investigation on High Quality Ultra-Wide Band Gap Β-Ga2o3/aln Heterostructure Grown by Metal Organic Chemical Vapor Deposition

Valence And Conduction Band Offsets Of Beta-Ga2o3/Aln Heterojunction

Bandgap Tailoring of Monoclinic Single-Phase -(Alxga1-x)2o3 (0 X 0.65) Thin Film by Annealing -Ga2o3/al2o3 Heterojunction at High Temperatures

Heteroepitaxial growth of -Ga<sub>2</sub>O<sub>3</sub> thin films on c-plane sapphire substrates with -(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> intermediate buffer layer by mist-CVD method

Band Alignment of AlN/β-Ga2O3 Heterojunction Interface Measured by X-Ray Photoelectron Spectroscopy

Identification And Modulation Of Electronic Band Structures Of Single-Phase Beta-(Alxga1-X)(2)O-3 Alloys Grown By Laser Molecular Beam Epitaxy

Al Coordination and Ga Interstitial Stability in a β-(Al0.2Ga0.8)2O3 Thin Film

Heteroepitaxial Growth and Band Alignment of Β-Ga2o3 on GaN Substrate Grown by Non-Vacuum Mist-Cvd

Identification and modulation of electronic band structures of single-phase β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> alloys grown by laser molecular beam epitaxy

Fabrication and interface properties of amorphous Ga2O3/GaAs heterojunction

Bandgap Tailoring of Monoclinic Single‐Phase β‐(Al x Ga 1‒ x ) 2 O 3 (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga 2 O 3 /Al 2 O 3 Heterojunction at High Temperatures

Enhancing the Mechanical Strength Ofβ-Ga2o3 with Al Alloying

(Digital Presentation) MOCVD Growth of Ga2O3, Algao and Heterostructures

Band Alignment of B0.14Al0.86N/Al0.7Ga0.3N Heterojunction

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Band alignment of h-BN/β-Ga2O3 heterostructure grown via ion beam sputtering deposition

Band Alignment and Electronic Structure of Β-Ga2o3 (−201) Grown on Si- and C-faces of 4h–sic Substrates

Investigation Of Energy Band At Atomic Layer Deposited Azo/Beta-Ga2o3 ((2)Over-Bar01) Heterojunctions

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

Thermal Conductivity Of Beta-Phase Ga2o3 And (Ai(X)Ga(1-X))(2)O-3 Heteroepitaxial Thin Films

Investigation of the surface band structure and the evolution of defects in β-(AlxGa1−x)2O3