Abstract:Nonpolar (112¯0) a-plane GaN films were grown on semipolar (11¯02) r-plane sapphire substrates using various buffer layers within a low-pressure metal organic chemical vapor deposition system. The structural properties of nonpolar a-plane GaN films were intensively investigated by X-ray diffraction and Raman spectra measurements. A set of buffer layers were adopted from a GaN layer to a composite layer containing a multiple AlN layers and a gradually varied-Al-content AlGaN layer, the full width at half maximum of the X-ray rocking curves measured along the [0001] and [101¯0] directions of a-plane GaN were reduced by 35% and 37%, respectively. It was also found that the basal-plane stacking faults (BSFs) density can be effectively reduced by the heterogeneous interface introduced together with the composite buffer layer. An order of magnitude reduction in BSFs density, as low as 2.95 × 104 cm−1, and a pit-free surface morphology were achieved for the a-plane GaN film grown with the composite buffer layer, which is promising for the development of nonpolar GaN-based devices in the future.

Influence of Growth Pressure of A Gan Buffer Layer on the Properties of Mocvd Gan

Influence of Sputtered AlN Buffer on GaN Epilayer Grown by MOCVD

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Surface Morphology of AlN Buffer Layer and Its Effect on GaN Growth by Metalorganic Chemical Vapor Deposition

Influences Of Initial Buffer Layer Deposition On Electrical And Optical Properties In Cubic Gan Grown On Gaas(100) By Metalorganic Chemical Vapor Deposition

Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate

Effect of AlN Buffer Layer Thickness on the Properties of GaN Films Grown by Pulsed Laser Deposition

The Influence of Aln Buffer Layer Thickness Grown by Pulsed Atomic Layer Epitaxy on the Properties of Gan Epilayer

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

Influence of High-Temperature Ain Buffer Thickness on the Properties of Gan Grown on Si(111)

The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GAN

Effect of Nitrogen Pressure on the Properties of GaN Films Epitaxially Grown on AlN/Si by Pulsed Laser Deposition

Effect Of Buffer Layer On The Growth Of Gan Films On Sapphire

The Influence of V/III Ratio in the Initial Growth Stage on the Properties of GaN Epilayer Deposited on Low Temperature AlN Buffer Layer

X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(0 0 1) substrates

Microstructural and Optical Properties of GaN Buffer Layers Grown on Graphene

The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

Mocvd Growth of Inn Using A Gan Buffer

Effect of the N/Al Ratio of AlN Buffer on the Crystal Properties and Stress State of GaN Film Grown on Si(111) Substrate

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film