Abstract:In order to decrease the effects of the lattice mismatch(+17%) and thermal mismatch(-54%) between GaN and Si,GaN films have been attempted to deposit on silicon substrates without and with different metal buffer layers by atmospheric pressure chemical vapor deposition(APCVD).In this study,Al and Au/Al metal buffer layers were separately prepared on Si(100) substrate by electron beam evaporation,and GaN films were then grown on these metal buffer layers using Ga and NH3 as precursors.The crystalline phase,structure,composition,morphology,and optical property of each sample were analyzed and compared respectively using high-resolution X-ray diffraction(HRXRD),field emission scanning electron microscope(FESEM),energy dispersive X-ray spectroscopy(EDS),and photoluminescence(PL).The results show that all samples are GaN polycrystalline films with a hexagonal wurtzite structure.The PL spectra of three samples have shown a strong emission peak near band edge and a weak yellow luminescence peak.Applying the metal buffer layer can directly lead to an obvious improvement in the densification,crystallinity,and emission intensity of GaN films,and also result a significant change in its growth orientation.Finally,the possible growth processes of GaN films deposited on silicon substrates with different metal buffer layers are discussed.

Effect Of Buffer Layer On The Growth Of Gan Films On Sapphire

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

Effect of Buffer Layer Growth Rate on Two-Dimension Growth of GaSb Epitaxial Layer

Effects of Buffer Layer on Structural Properties of Nonpolar (11(2)over-bar0)-Plane GaN Film

Effects of the V/III Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Properties of a -Gan Films Grown on R -Plane Sapphire Substrates by MOCVD

Influence of Double Aln Buffer Layers on the Qualities of Gan Films Prepared by Metal-Organic Chemical Vapour Deposition

Effect of Buffer Layer on the Structural and Morphological Properties of GaN Films Grown with ECR-PEMOCVD

GaP Layers Grown on GaN with and Without Buffer Layers

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

The Effects of Growth Temperature of AlN Buffer Layers Ona-Plane GaN Grown Onr-Plane Sapphire by MOCVD

Structure, Optical Property, and Growth Mechanism of Gan Films Grown on Metal Buffer Layer by APCVD

Influences Of Initial Buffer Layer Deposition On Electrical And Optical Properties In Cubic Gan Grown On Gaas(100) By Metalorganic Chemical Vapor Deposition

The Effects of Sapphire Nitridation on GaN Growth by Metalorganic Chemical Vapour Deposition

Surface Morphology of AlN Buffer Layer and Its Effect on GaN Growth by Metalorganic Chemical Vapor Deposition

Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy

Comparative Study on MOCVD Growth of a -Plane GaN Films on r -Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers

Properties of low-temperature-deposited GaN buffer layers

Growth processes of GaN buffer layer

Effects of Buffer Layer on Formation of Domain Boundaries in Epilayer During Film Growth of GaN by Low-Pressure Metal–organic Vapor Phase Epitaxy on Sapphire Substrates