Abstract:There has been increasing interest in the fabrication of thin film materials with mixed dimensions, in particular, 2D to 3D and 3D to 2D heterostructures. Often, if the interface interaction is weak, the lattice matching criterion between the substrate and overlayer can be lifted. If the overlayer lattice is completely relaxed, it can form an incommensurate film on the mismatched substrate. In this work, we show that domain boundaries are inherent in the incommensurate epitaxial films due to random nucleation sites of domains in an overlayer. The nature and origin of the incommensurate domain boundaries are different from the conventional dislocation boundaries that come from the relaxation of strain due to film–substrate lattice mismatch. We propose that the formation of such domain boundaries can be studied through Voronoi tessellation. Using a case study of monolayer WS2 on sapphire (2D on 3D), we show the formation of domain boundaries that compared well with a recent experiment reported in the literature. In the Voronoi tessellation, we also show quantitatively that the average domain size depends on the density of nucleation sites. The conclusion of this case study may be generalized to any incommensurate epitaxial films when the interface interaction is weak.

Effects of Buffer Layer on Formation of Domain Boundaries in Epilayer During Film Growth of GaN by Low-Pressure Metal–organic Vapor Phase Epitaxy on Sapphire Substrates

Effect Of Buffer Layer On The Growth Of Gan Films On Sapphire

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

Effect of Buffer Layer Growth Rate on Two-Dimension Growth of GaSb Epitaxial Layer

Effects of Buffer Layer on Structural Properties of Nonpolar (11(2)over-bar0)-Plane GaN Film

Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD

Effect of Domain Boundaries on the Electrical Properties of Crystalline Gd2O3 Thin Films

Microstructural and Optical Properties of GaN Buffer Layers Grown on Graphene

Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire

Effect of Buffer Layer on the Structural and Morphological Properties of GaN Films Grown with ECR-PEMOCVD

Alternative Microstructure of GaN Nucleation Layers Grown by Low Pressure Metal-Organic Vapor Phase Epitaxy on Sapphire Substrate

Domain Boundaries in Incommensurate Epitaxial Layers on Weakly Interacting Substrates

Properties of low-temperature-deposited GaN buffer layers

Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

The Effects of Sapphire Nitridation on GaN Growth by Metalorganic Chemical Vapour Deposition

Effect of Buffer Temperature on Epilayer Morphology for GaN on Si(111)

Low-temperature and Global Epitaxy of GaN on Amorphous Glass Substrates by Molecular Beam Epitaxy Via a Compound Buffer Layer

Occurrence of Cubic Gan and Strain Relaxation in Gan Buffer Layers Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates

Effects of the V/III Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Properties of a -Gan Films Grown on R -Plane Sapphire Substrates by MOCVD