Abstract:The deposition and crystallization of amorphous GaN buffer layers on Si(111) is firstly investigated by using an atomic force microscope (AFM), X-ray diffraction (XRD) and a high-resolution transmission electron microscope (HRTEM). The amorphous GaN layers were deposited by MOCVD at 300°C. The islanding process by annealing at higher temperatures has been revealed by AFM. It is found that the amorphous layers begin to be crystallized by solid-phase epitaxy at 500°C in MOCVD, and the full-developed islands formed at about 600°C. XRD data show that the GaN peak appeared only after an annealing at higher temperatures. Cross-sectional HRTEM micrographs of the buffer region of the samples with amorphous GaN buffer layers reveal that many domains exist in the GaN buffer layers and these domains misorientate each other with a small angle. The boundaries between domains locate near the bunched steps, and, the films on a terrace between steps have the same crystal orientation. The amorphous buffer layer deposited at 300°C and the buffer layer directly deposited at 550°C are used in the growth of GaN epilayers, respectively. The XRD results and photoluminescence at room temperature of such GaN epilayers show that using the amorphous GaN buffer layer lead to monocrystalline and a narrower full-width at half-maximum (FWHM) of near band emission (16nm) than using the buffer layer directly deposited at 550°C (FWHM of 21nm). These results indicate that the quality of GaN epilayer on Si(111) can be improved by using the amorphous GaN buffer layer.

Low-temperature and Global Epitaxy of GaN on Amorphous Glass Substrates by Molecular Beam Epitaxy Via a Compound Buffer Layer

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature

Deposition and Crystallization of Amorphous Gan Buffer Layers on Si(111)Substrates

Microstructural and Optical Properties of GaN Buffer Layers Grown on Graphene

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

The Influence of V/III Ratio on GaN Grown on Patterned Sapphire Substrate with Low Temperature AlN Buffer Layer by Hydride Vapor Phase Epitaxy

Low-temperature ECR-PEMOCVD Deposition of High-Quality Crystalline Gallium Nitride Films: A Comparative Study of Intermediate Layers for Growth on Amorphous Glass Substrates

Low-temperature Growth of High C-Orientated Crystalline GaN Films on Amorphous Ni/glass Substrates with ECR-PEMOCVD

Properties of low-temperature-deposited GaN buffer layers

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Characteristics of GaN epilayer grown on Al2O3 with AlN buffer layer by molecular beam epitaxy

Plasma Assisted Molecular Beam Epitaxial Growth of GaN with Low Growth Rates and Their Properties

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

Effect of AlN Nucleation Layer on the Structural Properties of Bulk GaN Grown on Sapphire by Molecular-Beam Epitaxy

Model for Low-Temperature Growth of Gallium Nitride