Abstract:The deposition and crystallization of amorphous GaN buffer layers on Si(111) is firstly investigated by using an atomic force microscope (AFM), X-ray diffraction (XRD) and a high-resolution transmission electron microscope (HRTEM). The amorphous GaN layers were deposited by MOCVD at 300°C. The islanding process by annealing at higher temperatures has been revealed by AFM. It is found that the amorphous layers begin to be crystallized by solid-phase epitaxy at 500°C in MOCVD, and the full-developed islands formed at about 600°C. XRD data show that the GaN peak appeared only after an annealing at higher temperatures. Cross-sectional HRTEM micrographs of the buffer region of the samples with amorphous GaN buffer layers reveal that many domains exist in the GaN buffer layers and these domains misorientate each other with a small angle. The boundaries between domains locate near the bunched steps, and, the films on a terrace between steps have the same crystal orientation. The amorphous buffer layer deposited at 300°C and the buffer layer directly deposited at 550°C are used in the growth of GaN epilayers, respectively. The XRD results and photoluminescence at room temperature of such GaN epilayers show that using the amorphous GaN buffer layer lead to monocrystalline and a narrower full-width at half-maximum (FWHM) of near band emission (16nm) than using the buffer layer directly deposited at 550°C (FWHM of 21nm). These results indicate that the quality of GaN epilayer on Si(111) can be improved by using the amorphous GaN buffer layer.

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

Deposition and Crystallization of Amorphous Gan Buffer Layers on Si(111)Substrates

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Microstructural and Compositional Characteristics of GaN Films Grown on a ZnO-buffered Si (111) Wafer.

Characterization for Microstructure of GaN on Si Substrates

Plasma-Assisted MOCVD Growth of Non-Polar GaN and AlGaN on Si(111) Substrates Utilizing GaN-AlN Buffer Layer

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding

Microstructure analysis on buffer layer in GaN/MgAl2O4

Effect of Buffer Temperature on Epilayer Morphology for GaN on Si(111)

Transmission Electron Microscopy Study of the Microstructure of a GaN Film Grown on Sapphire by Organometallic Vapor Phase Expitaxy

Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering

Characterization of Gan/Sapphire Interface and the Buffer Layer by TEM/AFM

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling

Preparation and Properties of Gan Micro-Ribbons on Ga-Diffused Si (111) Substrates

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD