Abstract:The deposition and crystallization of amorphous GaN buffer layers on Si(111) is firstly investigated by using an atomic force microscope (AFM), X-ray diffraction (XRD) and a high-resolution transmission electron microscope (HRTEM). The amorphous GaN layers were deposited by MOCVD at 300°C. The islanding process by annealing at higher temperatures has been revealed by AFM. It is found that the amorphous layers begin to be crystallized by solid-phase epitaxy at 500°C in MOCVD, and the full-developed islands formed at about 600°C. XRD data show that the GaN peak appeared only after an annealing at higher temperatures. Cross-sectional HRTEM micrographs of the buffer region of the samples with amorphous GaN buffer layers reveal that many domains exist in the GaN buffer layers and these domains misorientate each other with a small angle. The boundaries between domains locate near the bunched steps, and, the films on a terrace between steps have the same crystal orientation. The amorphous buffer layer deposited at 300°C and the buffer layer directly deposited at 550°C are used in the growth of GaN epilayers, respectively. The XRD results and photoluminescence at room temperature of such GaN epilayers show that using the amorphous GaN buffer layer lead to monocrystalline and a narrower full-width at half-maximum (FWHM) of near band emission (16nm) than using the buffer layer directly deposited at 550°C (FWHM of 21nm). These results indicate that the quality of GaN epilayer on Si(111) can be improved by using the amorphous GaN buffer layer.

Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Characterization for Microstructure of GaN on Si Substrates

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

Comparison of GaN epitaxial films on silicon nitride buffer and Si(111)

Structural and Photoluminescence Characterization of GaN Film Grown on Si (111) Substrate

An investigation on the epitaxial growth of GaN film on Si(111) substrate

Influence of AlN Buffer Layer on GaN Film Growth on Si(111) Substrates

Plasma-Assisted MOCVD Growth of Non-Polar GaN and AlGaN on Si(111) Substrates Utilizing GaN-AlN Buffer Layer

Microstructural and Compositional Characteristics of GaN Films Grown on a ZnO-buffered Si (111) Wafer.

Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Deposition and Crystallization of Amorphous Gan Buffer Layers on Si(111)Substrates

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition