Influence of AlN Buffer Layer on GaN Film Growth on Si(111) Substrates

Wang Jingrui,Ye Zhizhen,Zhao Binghui,Zhu Liping,Tang Haiping

DOI: https://doi.org/10.13922/j.cnki.cjovst.2006.04.012

2006-01-01

Abstract:Mechanisms responsible for GaN film growth on Si(111) substrate covered with AlN buffer layers were tentatively reviewed,and the optimized GaN film growth conditions were discussed.

What problem does this paper attempt to address?

Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

LIANG Jun-hua,GUO Bing,LIU Xu

DOI: https://doi.org/10.3785/j.issn.1008-973x.2007.09.016

2007-01-01

Abstract:Polycrystalline aluminum nitride(AlN) thin film with c-axis preferred orientation was deposited on indium tin oxide(ITO) glass substrate by reactive radio frequency(RF) magnetron sputtering,which introduced a low temperature AlN interlayer as buffer layer.The deposited films were characterized by X-ray diffraction(XRD),atomic force microscopy(AFM) and field emission scanning electron microcopy(FESEM) to investigate the influence of the buffer layer on the crystalline quality and surface morphology.The results indicated that the introduction of the buffer layer tended to improve the crystallization of AlN films and meanwhile decrease the surface roughness from 19.1 nm to 2.5 nm,leading to a dense and smooth surface texture.The cross-sectional scanning electron microcopy(SEM) photographs of AlN films showed a high degree of alignment for the columnar structure.Furthermore,transmission spectra were studied to obtain the refractive index(2.018 7) and the extinction coefficient(0.007 7) of the deposited films.
Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

P Chen,R Zhang,ZM Zhao,DJ Xi,B Shen,ZZ Chen,YG Zhou,SY Xie,WF Lu,YD Zheng

DOI: https://doi.org/10.1016/s0022-0248(01)00842-9

IF: 1.8

2001-01-01

Journal of Crystal Growth

Abstract:High quality GaN layers were grown on Si(111) substrates using high-temperature-grown AlN as buffer layer by rapid thermal process low-pressure metalorganic chemical vapor deposition. The growth and characteristics of AlN buffer layer and the GaN layers were investigated by using scanning electron microscope, X-ray diffraction, photoluminescence (PL), Raman scattering, and Hall measurements at room temperature. It was found that pre-seeding Al to Si surface is a critical condition for AlN growth on Si. Two-dimensional growth of AlN was achieved under optimized conditions. Raman scattering shows a narrow GaN E2 peak and broad AlN E2, E1 peaks. At room temperature, the investigated films are unintentionally doped n-type. The carrier concentration is about 1.3×1017cm−3 and the Hall mobility is about 210cm2/Vs. Metal–semiconductor–metal photoconductive detectors were fabricated on the GaN/Si(111) films. These detectors show a sharp cut-off wavelength at 363nm. A maximum responsivity of 6.9A/W was achieved at 357nm under a 5.0V bias. These results indicate that high quality GaN films on Si(111) can be obtained using the AlN buffer layer, and the potential application of GaN films based on Si substrates.
Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer

XF Ni,LP Zhu,ZZ Ye,Z Zhao,HP Tang,W Hong,BH Zhao

DOI: https://doi.org/10.1016/j.surfcoat.2004.10.073

2005-01-01

Abstract:Hexagonal GaN films exceeding 1 μm have been prepared on Si(111) substrates using high-temperature AlN buffer layers, and no cracks were observed. The FWHM of X-ray rocking curve for GaN (0002) was 560 arcsec. Strong band-edge photoluminescence (PL) was present in PL spectra. Micro-Raman spectra using shifts of E2 phonon showed that GaN films were in compressive stress, which agreed with the characterization result of X-ray lattice parameters method.
Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Mingtao Nong,Che-Hao Liao,Xiao Tang,Haicheng Cao,Tingang Liu,Patsy A. Miranda Cortez,Dhanu Chettri,Glen Isaac Maciel García,Xiaohang Li

DOI: https://doi.org/10.1063/5.0207884

IF: 4

2024-04-22

Applied Physics Letters

Abstract:This study investigated the growth of AlN epitaxial films on 2-in. Si(111) via metal-organic chemical vapor deposition. By introducing triethylboron (TEB) during trimethylaluminum pretreatment, a nearly crack free AlN epilayer with a thickness of 500 nm was acquired. The x-ray diffraction rocking curves of AlN (002) and (102) exhibited full width at half maximum values of 0.22° and 0.36°, respectively. Atomic force microscopy image analysis showed that after the introduction of TEB, larger grains appeared on the surface of Si(111) substrate, promoting the 3D growth pattern of the subsequent AlN buffer layer. Laytec reflection curves depicted the morphological transition from 3D to 2D growth mode during AlN deposition. At the same time, the curvature value was significantly reduced by 20 km−1, and the Raman spectrum peak of E2(high) shifted from 648.7 to 652.5 cm−1, indicating that the surface tensile stress was greatly reduced, effectively suppressing the crack problem of AlN on Si(111).

physics, applied
Plasma-Assisted MOCVD Growth of Non-Polar GaN and AlGaN on Si(111) Substrates Utilizing GaN-AlN Buffer Layer

Pepen Arifin,Heri Sutanto,Sugianto,Agus Subagio

DOI: https://doi.org/10.3390/coatings12010094

IF: 3.236

2022-01-14

Coatings

Abstract:We report the growth of non-polar GaN and AlGaN films on Si(111) substrates by plasma-assisted metal-organic chemical vapor deposition (PA-MOCVD). Low-temperature growth of GaN or AlN was used as a buffer layer to overcome the lattice mismatch and thermal expansion coefficient between GaN and Si(111) and GaN’s poor wetting on Si(111). As grown, the buffer layer is amorphous, and it crystalizes during annealing to the growth temperature and then serves as a template for the growth of GaN or AlGaN. We used scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD) characterization to investigate the influence of the buffer layer on crystal structure, orientation, and the morphology of GaN. We found that the GaN buffer layer is superior to the AlN buffer layer. The thickness of the GaN buffer layer played a critical role in the crystal quality and plane orientation and in reducing the cracks during the growth of GaN/Si(111) layers. The optimum GaN buffer layer thickness is around 50 nm, and by using the optimized GaN buffer layer, we investigated the growth of AlGaN with varying Al compositions. The morphology of the AlGaN films is flat and homogenous, with less than 1 nm surface roughness, and has preferred orientation in a-axis.

materials science, multidisciplinary,physics, applied, coatings & films
Al diffusion in GaN buffer layer during the growth of GaN film

Shu-You Li,Jing Zhu

DOI: https://doi.org/10.1016/S0022-0248(99)00131-1

IF: 1.8

1999-01-01

Journal of Crystal Growth

Abstract:The structure, composition and chemical bonding state of the buffer layer produced during the growth of GaN single crystal film were studied by using analytical electron microscopy. It was found that the buffer layer is a compound containing both GaN and AlN (or AlxGa1−xN) although Al was not introduced during the crystal growth. This result indicates that aluminum had diffused from Al2O3 substrate to the buffer layer and some AlN or AlxGa1−xN microcrystals had been formed in the buffer layer. These microcrystals are very important for releasing the stress near the interface.
Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

C. X. Xu,W. Chen,X. H. Pan,S. S. Chen,Z. Z. Ye,J. Y. Huang

DOI: https://doi.org/10.1016/j.jcrysgro.2016.06.005

IF: 1.8

2016-01-01

Journal of Crystal Growth

Abstract:In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.
Influence of Sputtered AlN Buffer on GaN Epilayer Grown by MOCVD

Zhiwen Liang,Ye Yuan,Pengwei Wang,JunJie Kang,Qi Wang,Guoyi Zhang

DOI: https://doi.org/10.1088/1361-6463/aca106

2022-01-01

Abstract:The ex situ sputtered AlN buffer and GaN epilayer grown on top of it by metalorganic chemical vapor deposition were studied comprehensively by a variety of techniques including atomic force microscope, high resolution x-ray diffraction, Raman and x-ray photoelectron spectroscopy characterizations. It exhibited that the AlN buffer deposited by using sputtering technique could be oxidized with exposure in atmosphere. Such oxidation phenomenon significantly influences the characteristics of GaN epilayer, for example leading to poor surface morphology, high dislocation density, and large compressive stress. This study demonstrated the effect of oxygen impurities on GaN growth and has an important guiding significance for the growth of high-quality III-nitride related materials.
Influence of Al Interlayer on the Growth of AlN on Si(111) Substrate

胡懿彬,郝智彪,胡健楠,钮浪,汪莱,罗毅

DOI: https://doi.org/10.16818/j.issn1001-5868.2012.06.016

2012-01-01

Abstract:The influence of Al interlayer on the growth of AlN on Si(111) substrate was studied by using PA-MBE.It is found that the AlN crystalline quality is improved by introducing the Al interlayer,and the holes on epitaxial surface can be eliminated by adopting a pre-diffusing process.Futhermore,the AlN grown with pre-diffusing Al interlayer proves to be Al-polar,otherwise presenting N-polar characteristics.
Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Deng Xu-guang,Xing Yan-hui

Abstract:GaN thin film with AlN nucleation layer was grown on Si(lll) substrates using metal-organic chemical vapor deposition(MOCVD).High resolution X-ray diffraction(XRD),ellipsometer and atomic force microscope(AFM) are used to investigate the effect of AlN thickness on GaN film.The results demonstrate that the thickness of low temperature AlN nucleation layer prominently influences the morphology of AlN nucleation layers,the crystal quality and stress of GaN epilayers.It is found that the surface roughness of AlN samples is larger with thicker AlN nucleation layer.θ—2θscan of(0002) shows that the compressive strAlN exists on all GaN samples in c-axis direction and reduces slightly with the increasing of AlN thickness,w scan shows that FWHM of(0002) increases while FWHM of(10-12) decreases with the increasing of AlN thickness.FWHM of(10-12) is related with the density of edge-type threading dislocation(ETD).It means that ETD reduces with the AlN thickness increasing.The change in dislocation density is attributed to the different grAlN sizes and grAlN densities on AlN nucleation layers. The crystal quality of GaN epilayer deposited on AlN nucleation layer with large grAlN size and low grAlN density is good,since the lateral growth and coalescence of GaN islands are promoted.On the other hand,the AlN nucleation layer with small grAlN size and high grAlN density leads to formation of dislocations. These dislocations degrade the crystal quality of GaN.

Engineering,Materials Science,Physics
Comparison of GaN epitaxial films on silicon nitride buffer and Si(111)

Jingyun Huang,Zhizhen Ye,Lei Wang,Jun Yuan,Binghui Zhao,Huanming Lu

DOI: https://doi.org/10.1016/S0038-1101(02)00021-7

IF: 1.916

2002-01-01

Solid-State Electronics

Abstract:The crystalline GaN films were grown on Si(111) or using Si3N4 as a buffer layer by hot wall chemical vapor deposition. X-ray diffraction (XRD), photoluminescence (PL) and spreading resistance were sued to characterize the crystalline GaN films with or without a Si3N4 buffer. The XRD indicated that the GaN epilayer was in a wurtzite structure. The PL spectrum at room temperature exhibited a strong emission of the GaN epilayer with a silicon nitride buffer at the wavelength of 365 nm and no yellow luminescence (YL) was present, but the PL spectrum of the GaN directly on silicon was not so strong and yellow luminescence was present. The Si3N4 buffer layer was a high resistivity layer by spreading resistance. This simple but effective technique not only suppressed the YL but also made it possible to grow high-quality GaN on Si substrate.
Characterization for Microstructure of GaN on Si Substrates

江若琏,陈鹏,赵作明,沈波,张荣,郑有炓

DOI: https://doi.org/10.3969/j.issn.1004-5929.2003.04.009

2003-01-01

Abstract:Using AlN and anodic alumina as the respective buffer layers, GaN films on Si (111) were grown by rapid thermal process/low pressure-metalorganic chemical vapor deposition (RTP/LP-MOCVD). Crystal structures of the GaN epilayers were characterized by X-ray diffraction (XRD), photoluminescence (PL) and Raman scattering. Results indicate that AlN is a good buffer material between Si and GaN.
Effect of Buffer Temperature on Epilayer Morphology for GaN on Si(111)

Xu Yue-sheng

Abstract:GaN epitaxial layers were grown on Si(111) substrates with AlN buffer layers at different growth temperature. X-ray diffraction(DCXRD) and scanning electron microscope(SEM) were used as analysis tool to reveal the relation between growth temperature of buffer layer and epilayer surface morphology. The “pits” on epitaxial surface and the relation with buffer growth temperature were explained through these analysis.It indicates that the buffer growth temperature influences surface morphology through nucleation seed density and dimension dropped on the Si(111) substrate at initial time of buffer growth. When the buffer temperature was low, nucleation seeds were frozen on the surface of substrate and could not move to neighboring seeds. Nucleation seeds density was high and dimension was small. When the buffer temperature was high, the nucleation seeds had enough energy to merge with other seeds and density of seeds was low and dimension was big. This nucleation difference caused the epilayer morphology difference. Through this analysis, one growth model was created to guide the later experiments.

Engineering,Materials Science,Physics
Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Xiao-Ying Zhang,Duan-Chen Peng,Jing Han,Fang-Bin Ren,Shi-Cong Jiang,Ming-Chun Tseng,Yu-Jiao Ruan,Juan Zuo,Wan-Yu Wu,Dong-Sing Wuu,Chien-Jung Huang,Shui-Yang Lien,Wen-Zhang Zhu

DOI: https://doi.org/10.1016/j.surfin.2022.102589

IF: 6.2

2022-12-17

Surfaces and Interfaces

Abstract:Aluminum nitride (AlN) thin film has considerable properties, which makes it advantages for a variety of applications. AlN films were prepared by remote plasma atomic layer deposition (RP-ALD) with the growth temperature of 100 to 450 °C. The properties of AlN films with various growth temperatures were studied systematically. In addition, AlN/GaN layers deposited on sapphire (Al 2 O 3 ) substrates were also investigated. The AlN/GaN interfaces and AlN/Al 2 O 3 interfaces characteristics were analyzed. The optical property of GaN films prepared on sapphire substrates with and without AlN buffer layer were identified by photoluminescence measurement. The experiment result shows that crystal AlN films became to present at 250 °C with a hexagonal wurtzite structure. X-ray photoelectron spectroscopy investigation shows that AlN films contain Al-O, Al-O-N complexes and Al-Al metallic aluminum bonds except the main Al-N bond confirmed by high resolution Al 2p and N 1s spectra. High-resolution transmission electron microscopy measurement reveals sharp interfaces of AlN/Al 2 O 3 and AlN/GaN. The obtained lowest lattice mismatch of AlN/Al 2 O 3 and AlN/GaN are 11.0% and 2.1%, respectively. Photoluminescence measurement further confirms that AlN buffer layer enhances the quality of GaN grown on sapphire substrates. High quality AlN/GaN layers prepared by RP-ALD provides a promising pathway towards high quality GaN-based devices.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Kai Chen,Yachao Zhang,Jincheng Zhang,Xing Wang,Yixin Yao,Jinbang Ma,Yue Hao

DOI: https://doi.org/10.1016/j.ceramint.2022.08.176

IF: 5.532

2022-12-01

Ceramics International

Abstract:High-quality AlGaN/GaN/AlN heterostructures with thin GaN channel and thick AlN buffer layer were grown by metal organic chemical vapor deposition (MOCVD) on SiC substrate. By analyzing growth modes of GaN films on AlN buffer layers with different thicknesses, it is revealed that film-forming point of GaN grown on AlN buffer increases with the increase in AlN buffer thickness. Accordingly, new growth model of GaN on AlN buffer was proposed, which shows that there is an optimal matching value between Ga source flow rate and AlN thickness when GaN is grown on AlN buffer of different thicknesses. Under optimal conditions, AlGaN/GaN/AlN heterostructures with 120 nm thin GaN channel layer and thick AlN buffer show excellent carrier-limited domain, high crystalline quality, and good transport properties. Results in this work would be useful for preparing high-quality heterostructures on AlN buffer and high electron mobility transistor (HEMT) devices. Moreover, these findings can also be applied to the growth of other hyperfine structures (quantum wells, superlattices, and digital alloys) in the future.

materials science, ceramics
Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Haiyan Wang,Zeqi Lin,Binhao Qin,Yupeng Zhang

DOI: https://doi.org/10.1016/j.jcrysgro.2024.127958

IF: 1.8

2024-10-22

Journal of Crystal Growth

Abstract:GaN epitaxial films were grown on Si substrates by ex situ two-step method combining the technologies of pulsed laser deposition (PLD) and metal organic chemical vapor deposition (MOCVD). The N/Al ratio of high-temperature AlN (HT-AlN) buffer layer was optimized, and its influence on the HT-AlN growth mode as well as the quality of GaN epitaxial films was investigated. When the N/Al ratio was 500, the two-dimensional growth of HT-AlN was greatly enhanced, and it obtained a coalesced and smooth surface with the minimum RMS surface roughness as 1.63 nm. The as-grown GaN epitaxial film had the best crystalline quality with the minimum full-width at half maximums of GaN(0002) and GaN(10 1 ̄ 2) as 0.14° and 0.22°, respectively. Owing to the high energy of PLD, the ex situ low-temperature AlN template had an abrupt Si/AlN interface and flat surface, which was of significance to improve the quality of HT-AlN buffer and GaN film.

materials science, multidisciplinary,physics, applied,crystallography
Microstructural and Compositional Characteristics of GaN Films Grown on a ZnO-buffered Si (111) Wafer.

XH Luo,RM Wang,XP Zhang,HZ Zhang,DP Yu,MC Luo

DOI: https://doi.org/10.1016/j.micron.2004.01.010

IF: 2.381

2004-01-01

Micron

Abstract:Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO(2) amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO(2)/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains ( approximately 100 nm in size) grown along [0001] direction with about 20 degrees between the (1l00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer.
Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

QiJia Liu,Rong Zhang,ZiLi Xie,Bin Liu,Feng Xu,Jing Yao,Chao Nie,XiangQian Xiu,Ping Han,YouDou Zheng,HaiMei Gong

DOI: https://doi.org/10.1007/s11431-008-0132-7

2008-01-01

Abstract:AlN (aluminium nitride) films were prepared by metalorganic chemical vapor deposition (MOCVD) on c -plane sapphire (α-Al 2 O 3 ) substrates. By means of studying the traces of in-situ optical reflectivity, it was found that the AlN nucleation layer showed a specific (0001) lattice orientation, which differed from the GaN nucleation layer on (0001) sapphire substrates. The AlN buffer suffered the compressive stress at the initial stage of nucleation. And the compressive strain was relaxed gradually along with the thickness of buffer increasing and consequently annealing. Optical transmission spectra revealed that in the process of growing AlN epilayers, higher V/III ratio could improve the crystal quality but reduce the growth rates. In addition, proper doping of silane (SiH 4 ) could improve the surface morphology of AlN film.
Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

P Chen,B Shen,JM Zhu,ZZ Chen,YG Zhou,SY Xie,R Zhang,P Han,SL Gu,YD Zheng,SS Jiang,D Feng,ZC Huang

DOI: https://doi.org/10.1088/0256-307x/17/3/024

2000-01-01

Chinese Physics Letters

Abstract:Microstructures of GaN buffer layers grown on Si (111) substrates using rapid thermal process low-pressure metalorganic chemical vapor deposition are investigated by an atomic force microscope (AFM) and a high-resolution transmission electron microscope (HRTEM). AFM images show that the islands appear in the GaN buffer layer after annealing at high temperature. Cross-sectional HRTEM micrographs of the buffer region of these samples indicate that there are bunched steps on the surface of the Si substrate and a lot of domains in GaN misorienting each other with small angles. The boundaries of those domains locate near the bunched steps, and the regions of the film on a terrace between steps have the same crystal orientation. An amorphous-like layer, about 3 nm thick, can also be observed between the GaN buffer layer and the Si substrate.
Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)

Ding Zhi-Bo,Yao Shu-De,Kun Wang,Kai Cheng

DOI: https://doi.org/10.3321/j.issn:1000-3290.2006.06.054

2006-01-01

Abstract:Hexagonal GaN epilayers with different Al_xGa_ 1-x N and AlN buffer layers were grown on Si(111) by metal_organic vapor phase epitaxy (MOVPE). Under the same growth conditions, the sample with four Al_xGa_ 1-x N buffer layers and one AlN buffer layer were grown on Si(111). According to the results of Rutherford backscattering (RBS)/channeling along 〈0001〉 axis, the conventional θ—2θ scans normal to GaN(0002) and (1122) plane at 0° and 180° azimuthal angles, and the reciprocal_space X_ray mapping (RSM) on GaN(1015) plane, we obtained that the crystal quality of the GaN epilayer is perfect with χ__ min =1.54%. The crystal lattice constant of AlN, Al_xGa_ 1-x N and GaN epilayer has been calculated accurately, the lattice constant of GaN epilayer is almost equal to the theoretic data (a_ epi =0\^31903nm, c_ epi =0\^51837nm). The tetragonal distortion along the depth can got clearly from elastic strains of each layer in the normal and parallel directions, and the tetragonal distortion of GaN epilayer is nearly fully relaxed(e_T=0).

Influence of AlN Buffer Layer on GaN Film Growth on Si(111) Substrates

Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Plasma-Assisted MOCVD Growth of Non-Polar GaN and AlGaN on Si(111) Substrates Utilizing GaN-AlN Buffer Layer

Al diffusion in GaN buffer layer during the growth of GaN film

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Influence of Sputtered AlN Buffer on GaN Epilayer Grown by MOCVD

Influence of Al Interlayer on the Growth of AlN on Si(111) Substrate

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Comparison of GaN epitaxial films on silicon nitride buffer and Si(111)

Characterization for Microstructure of GaN on Si Substrates

Effect of Buffer Temperature on Epilayer Morphology for GaN on Si(111)

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Microstructural and Compositional Characteristics of GaN Films Grown on a ZnO-buffered Si (111) Wafer.

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)