Abstract:GaN thin film with AlN nucleation layer was grown on Si(lll) substrates using metal-organic chemical vapor deposition(MOCVD).High resolution X-ray diffraction(XRD),ellipsometer and atomic force microscope(AFM) are used to investigate the effect of AlN thickness on GaN film.The results demonstrate that the thickness of low temperature AlN nucleation layer prominently influences the morphology of AlN nucleation layers,the crystal quality and stress of GaN epilayers.It is found that the surface roughness of AlN samples is larger with thicker AlN nucleation layer.θ—2θscan of(0002) shows that the compressive strAlN exists on all GaN samples in c-axis direction and reduces slightly with the increasing of AlN thickness,w scan shows that FWHM of(0002) increases while FWHM of(10-12) decreases with the increasing of AlN thickness.FWHM of(10-12) is related with the density of edge-type threading dislocation(ETD).It means that ETD reduces with the AlN thickness increasing.The change in dislocation density is attributed to the different grAlN sizes and grAlN densities on AlN nucleation layers. The crystal quality of GaN epilayer deposited on AlN nucleation layer with large grAlN size and low grAlN density is good,since the lateral growth and coalescence of GaN islands are promoted.On the other hand,the AlN nucleation layer with small grAlN size and high grAlN density leads to formation of dislocations. These dislocations degrade the crystal quality of GaN.

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Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

The Effect of Al Interlayers on the Growth of AlN on Si Substrates by Metal Organic Chemical Vapor Deposition

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Influence of AlN Buffer Layer on GaN Film Growth on Si(111) Substrates

Sublimation Growth of Aluminum Nitride on Silicon Carbide Substrate with Aluminum Nitride–silicon Carbide Alloy Transition Layer

The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on Sic (0001) Substrates

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

Influence of the Nucleation Layer Morphology on the Structural Property of AlN Films Grown on C-Plane Sapphire by MOCVD

Interfacial Properties of AlN/Si (111) Grown by Metal-Organic Chemical Vapour Deposition

Surface Morphology of AlN Nucleation Layer Grown on Si by MOCVD

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

The Influence of AlN Interlayers on the Microstructural and Electrical Properties of P -Type AlGaN/GaN Superlattices Grown on GaN/sapphire Templates

Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition

Effect of AlN Interlayer on Incorporation Efficiency of Al Composition in AlGaN Grown by MOVPE

MBE-grown AlN-on-Si with Improved Crystalline Quality by Using Silicon-on-insulator Substrates

Atomic Simulation of Homoepitaxial AlN on Non-Polar (11-20) Plane

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer