Abstract:We have investigated the growth of AlN films on hexagonal nano-concave-circle patterned Si substrates using metal–organic chemical vapor deposition. By depositing a thin AlN seed layer on the Si substrate before the pattern process, a high quality AlN film with a thickness of 2 μm has been obtained. The full width at half maximum values of X-ray diffraction rocking curves are as low as 409 and 677 arc sec for AlN (002) and (102) planes, respectively. Further experimental results indicate that the AlN seed layer can suppress the misorientation of the adjacent grains, as revealed by the lower twist and tilt angles of the mosaic structure, and thus only a few dislocations generated during the grain coalescence. In addition, the migration of Al adatoms is enhanced on the Al terminated surface of the AlN seed layer, which accelerates the coalescence process. All these improvements are attributed to the lower binding energy and diffusion barrier for Al adatoms on the Al terminated surface than that on the Si surface. Our results demonstrate an effective approach to obtain high quality AlN films for high performance ultraviolet light-emitting diodes on the Si substrate.

MBE-grown AlN-on-Si with Improved Crystalline Quality by Using Silicon-on-insulator Substrates

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

Epitaxial Growth of High Quality AlN Films on Si Substrates

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Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy

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High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

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Improvements in characteristics of N-polar Si-doped AlGaN epi-layer grown on mis-oriented c-plane sapphire substrate

Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

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Growth Evolution Of Aln Films On Silicon (111) Substrates By Pulsed Laser Deposition

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Improved crystal quality of AlGaN by Al ion-implantation sapphire substrate