Abstract:GaN thin film with AlN nucleation layer was grown on Si(lll) substrates using metal-organic chemical vapor deposition(MOCVD).High resolution X-ray diffraction(XRD),ellipsometer and atomic force microscope(AFM) are used to investigate the effect of AlN thickness on GaN film.The results demonstrate that the thickness of low temperature AlN nucleation layer prominently influences the morphology of AlN nucleation layers,the crystal quality and stress of GaN epilayers.It is found that the surface roughness of AlN samples is larger with thicker AlN nucleation layer.θ—2θscan of(0002) shows that the compressive strAlN exists on all GaN samples in c-axis direction and reduces slightly with the increasing of AlN thickness,w scan shows that FWHM of(0002) increases while FWHM of(10-12) decreases with the increasing of AlN thickness.FWHM of(10-12) is related with the density of edge-type threading dislocation(ETD).It means that ETD reduces with the AlN thickness increasing.The change in dislocation density is attributed to the different grAlN sizes and grAlN densities on AlN nucleation layers. The crystal quality of GaN epilayer deposited on AlN nucleation layer with large grAlN size and low grAlN density is good,since the lateral growth and coalescence of GaN islands are promoted.On the other hand,the AlN nucleation layer with small grAlN size and high grAlN density leads to formation of dislocations. These dislocations degrade the crystal quality of GaN.

Effect of AlN Interlayer on Incorporation Efficiency of Al Composition in AlGaN Grown by MOVPE

Study on Structure of AlGaN on AlN Interlayer by Synchrotron Radiation XRD and RBS

The Influence of AlN Interlayers on the Microstructural and Electrical Properties of P -Type AlGaN/GaN Superlattices Grown on GaN/sapphire Templates

Gas-phase Parasitic Reactions and Al Incorporation Efficiency in Light Radiation Heating, Low-Pressure Metal–organic Chemical Vapor Deposition of AlGaN

The Effect of Al Interlayers on the Growth of AlN on Si Substrates by Metal Organic Chemical Vapor Deposition

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Effect of the Alloyed Interlayer on the Thermal Conductance of Al/GaN Interface

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Research on the mechanism and influence of P incorporation in N-rich nitride AlPN and growth of high quality AlPN/GaN HEMT

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Effect of AlN/GaN supercycle ratio on properties of Al x Ga 1−x N films using super-cycle plasma enhanced atomic layer deposition

Influence of the Nucleation Layer Morphology on the Structural Property of AlN Films Grown on C-Plane Sapphire by MOCVD

Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy

Morphology And Microstructure Evolution Of Alxga1-Xn Epilayers Grown On Gan/Sapphire Templates With Aln Interlayers Observed By Transmission Electron Microscopy

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Plasma Assisted Molecular Beam Epitaxy Growth Mechanism of AlGaN Epilayers and Strain Relaxation on AlN Templates

Effect of NH3-flow modulation on the morphological properties of nonpolar a-plane AlGaN epilayers