Abstract:Metalorganic chemical vapour deposition and molecular beam epitaxy have already been demonstrated to be successful techniques for obtaining high-quality epitaxial GaN layers with low impurity concentrations and pretty good electrical properties. However, high growth temperature employed in both of these methods give rise to some intrinsic defects of the thin films, such as high background-carrier concentrations. As a low-temperature thin film deposition method, plasma-enhanced atomic layer deposition (PE-ALD) has more unique advantages compared to both methods for epitaxial growth of GaN. In this paper, the polycrystalline GaN thin films were fabricated on Si (100) substrates at 150-300 degrees C by PE-ALD. Trimethylgallium and N-2/H-2 plasma gas mixture were used as the Ga and N precursors. The growth rate of the thin films was demonstrated by the spectroscopic ellipsometer. The crystal structrue and composition of the GaN thin films were characterized by X-ray diffractometer and X-ray photoelectron spectrometer (XPS). It is showed that the growth window for PE-ALD grown GaN thin films is 210-270 degrees C, where the growth rate remains constant at 0.70 angstrom/cycle. And it is known that it is the self-limiting nature of PE-ALD that is ascribed to the plateau of the growth rate. Films grown at relatively higher temperature are polycrystalline with a hexagonal wurtzite structure, while films grown under relatively lower temperature are amorphous. The grazing incidence X-ray diffraction (GIXRD) patterns of the polycrystalline thin films reveal three main peaks located at 2 theta = 3 2.4 degrees, 34.6 degrees and 36.9 degrees, which are corresponding to the (100), (002) and (101) reflections. It is showed that the Ga, N atoms would get higher energy for more effective migration to positions with lowest energy to form ordered crystalline arrange at higher growth temperature. The XPS results show that all the N elements of the as-grown thin films are in the form of N-Ga bond, indicating that all the N elements are formed into GaN thin films; and there is a little amount of the Ga elements that exist in Ga-O bond. The fact that there is no Ga2O3-related peaks in the GIXRD pattern suggests that there is small amount of amorphous Ga2O3 dispersed in the polycrystalline GaN thin films. In the future work, reducing the concentration of the C and O impurities may be achieved by increasing the time of the reaction and plasma pules in the process formula and replacing the inductively coupled plasma with the hollow cathode plasma, respectively.

Gas-phase Parasitic Reactions and Al Incorporation Efficiency in Light Radiation Heating, Low-Pressure Metal–organic Chemical Vapor Deposition of AlGaN

Relationship Between the Growth Rate and Al Incorporation of AlGaN by Metalorganic Chemical Vapor Deposition

Growth of GaN films using light radiation heating metal chemical vapor deposition

Growth of Wurtzite GaN Films on Α-Al2o3 Substrates Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition

Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metal-organic vapor phase epitaxy

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Growth of High Al Content AlGaN Epilayer by MOCVD

Plasma Assisted Molecular Beam Epitaxy Growth Mechanism of AlGaN Epilayers and Strain Relaxation on AlN Templates

Effect of AlN Interlayer on Incorporation Efficiency of Al Composition in AlGaN Grown by MOVPE

Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

Influence of High-Temperature AlN Intermediate Layer on the Optical Properties of MOCVD Grown AlGaN Films

Gas-Phase Chemical Reaction Mechanism in the Growth of AlN during High-Temperature MOCVD: A Thermodynamic Study

Prepare of ZnAl2O4/-Al2O3 Complex Substrates and Growth of GaN Films

The Effects of LT AlN Buffer Thickness on the Properties of High Al Composition AlGaN Epilayers

Optical and Electrical Properties of AlxGa1−xN/GaN Epilayers Modulated by Aluminum Content

Characteristics of High Al Content AlxGa1−xN Grown by Metalorganic Chemical Vapor Deposition

GaN MOCVD Growth on ZnAl2O4/α-Al2O3 Substrates

Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures