Abstract:Group III-nitride materials such as GaN nanowires are characterized by a spontaneous polarization within the crystal. The sign of the resulting sheet charge at the top and bottom facet of a GaN nanowire is determined by the orientation of the wurtzite bilayer of the different atomic species, called N and Ga polarity. We investigate the polarity distribution of heteroepitaxial GaN nanowires on different substrates and demonstrate polarity control of GaN nanowires on diamond. Kelvin Probe Force Microscopy is used to determine the polarity of individual selective area-grown and self-assembled nanowires over a large scale. At standard growth conditions, mixed polarity occurs for selective GaN nanowires on various substrates, namely on silicon, on sapphire and on diamond. To obtain control over the growth orientation on diamond, the substrate surface is modified by nitrogen and oxygen plasma exposure prior to growth, and the growth parameters are adjusted simultaneously. We find that the surface chemistry and the substrate temperature are the decisive factors for obtaining control of up to 93% for both polarity types, whereas the growth mode, namely selective area or self-assembled growth, does not influence the polarity distribution significantly. The experimental results are discussed by a model based on the interfacial bonds between the GaN nanowires, the termination layer, and the substrate.

Effect of GaN Interlayer on Polarity Control of Epitaxial ZnO Thin Films Grown by Molecular Beam Epitaxy

Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy

Effect of GaN Buffer Layers on the Polarity and Properties of ZnO Epilayers on Nitrided C‐al2o3 by MBE

Polarity Control Of Zno Films Grown On Nitrided C-Sapphire By Molecular-Beam Epitaxy

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Polarity Control of ZnO Films Grown on Ferroelectric (0001) LiNbO3 Substrates without Buffer Layers by Pulsed-Laser Deposition

Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration

Polarity Control of Heteroepitaxial GaN Nanowires on Diamond

Controlled Growth of Zn-Polar Zno Epitaxial Film by Nitridation of Sapphire Substrate

Rotation‐domains Suppression and Polarity Control of ZnO Epilayers Grown on Skillfully Treated C‐al2o3 Surfaces

Controlled Growth Of Zn-Polar Zno Films On Al-Terminated Alpha-Al2o3(0001) Surface By Using Wurtzite Mgo Buffer

Cubic Nitridation Layers on Sapphire Substrate and Their Role in Polarity Selection of ZnO Films

Controlled Growth of Zn-Polar ZnO Films on Al-Terminated Α-Al 2 O 3 (0001) Surface by Using Wurtzite MgO Buffer

Role of Gallium Wetting Layer in High-Quality Zno Growth on Sapphire(0001) Substrates

Polarity control by inversion domain suppression in N-polar III-nitride heterostructures

Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration (Adv. Mater. 5/2022)

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

The role of AlN thickness in MOCVD growth of N-polar GaN

Metastable rocksalt ZnO interfacial layer and its influence on polarity selection of Zn-polar ZnO films

Controlled Growth of O-polar ZnO Epitaxial Film by Oxygen Radical Preconditioning of Sapphire Substrate

Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity