Abstract:The initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates were investigated. High-resolution x-ray diffraction and transmission electron microscopy studies revealed that the initial growth behavior and the microstructure of the films were significantly dependent on the growth parameters employed. ZnO films grown at 700°C with an O2 partial pressure of 20mTorr initiated in a columnar growth mode and contained two types of domains. These domains were in plane orientated either ZnO[112¯0]‖Al2O3[101¯0] or ZnO[101¯0]‖Al2O3[101¯0] and were surrounded by highly defective domain boundaries with threading dislocations. ZnO films grown at 800°C with 1mTorr O2 showed a two-dimensional layered growth with only one in-plane epitaxial relationship, ZnO[112¯0]‖Al2O3[101¯0]. Most of the defects in the layered grown films were basal plane stacking faults near the interface between the ZnO and the substrate. The mechanism of formation of the 30°-twisted domains with the in-plane orientation of ZnO[101¯0]‖Al2O3[101¯0] is discussed.

Controlled Growth of Zn-Polar Zno Epitaxial Film by Nitridation of Sapphire Substrate

Controlled Growth of O-polar ZnO Epitaxial Film by Oxygen Radical Preconditioning of Sapphire Substrate

Polarity Control Of Zno Films Grown On Nitrided C-Sapphire By Molecular-Beam Epitaxy

Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface

Controlled Growth Of Zn-Polar Zno Films On Al-Terminated Alpha-Al2o3(0001) Surface By Using Wurtzite Mgo Buffer

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Controlled Growth of Zn-Polar ZnO Films on Al-Terminated Α-Al 2 O 3 (0001) Surface by Using Wurtzite MgO Buffer

Cubic Nitridation Layers on Sapphire Substrate and Their Role in Polarity Selection of ZnO Films

Controlled Growth of Zn-polar ZnO Film on MgAl2O4 (1 1 1) Substrate Using MgO Buffer Layer

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation

Tri-Buffer Process: A New Approach to Obtain High-Quality Zno Epitaxial Films on Sapphire Substrates

Effect of Sapphire Substrate Nitridation on the Elimination of Rotation Domains in ZnO Epitaxial Films

Surface Modification of Mgal2o4 (111) for Growth of High-Quality Zno Epitaxial Films

Growth of ZnO thin films on LSAT(111) substrates by plasma-assisted radio-frequency molecular beam epitaxy

Structural Characterization of Zn-polar ZnO Films Grown on Mg-modified C-Al2o3 (0001) Surface

Effect of GaN Interlayer on Polarity Control of Epitaxial ZnO Thin Films Grown by Molecular Beam Epitaxy

Rotation‐domains Suppression and Polarity Control of ZnO Epilayers Grown on Skillfully Treated C‐al2o3 Surfaces

Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

Growth of Epitaxial C-Plane Zno Film on A-Plane Sapphire by Radio Frequency Reactive Magnetron Sputtering

Epitaxial growth of non-polar m-plane ZnO thin films by pulsed laser deposition

MBE‐grown ZnO Film on Sapphire Substrate with Double Buffer Layers