Abstract:Abstract The growth of hetero-epitaxial ZnO-AlN core–shell nanowires (NWs) and single crystalline AlN films on non-polar ZnO substrate at temperature of 380 °C by atomic layer deposition (ALD) was investigated. Structural characterization shows that the AlN shells have excellent single-crystal properties. The epitaxial relationship of [0002] ZnO //[0002] AlN , and [10−10] ZnO //[10−10] AlN between ZnO core and AlN shell has been obtained. The ZnO NW templates were subsequently removed by annealing treatment in forming gas, resulting in ordered arrays of AlN single-crystal nanotubes. The impact factors on the epitaxial growth of AlN films are thoroughly investigated. It turned out that the growth parameters including lattice mismatch between substrate and AlN, growth temperature, and the polarity of ZnO substrate play important roles on the growth of single-crystal AlN films by ALD. Finally, non-polar AlN films with single-crystalline structure have been successfully grown on m -plane ZnO (10−10) single-crystal substrates. The as-grown hollow AlN nanotubes arrays and non-polar AlN films with single-crystalline structures are suggested to be highly promising for applications in nanoscale devices. Our research has developed a potential method to obtain other inorganic nanostructures and films with single-crystalline structure at fairly low temperature.

Cubic Nitridation Layers on Sapphire Substrate and Their Role in Polarity Selection of ZnO Films

Controlled Growth of Zn-Polar Zno Epitaxial Film by Nitridation of Sapphire Substrate

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Polarity Control Of Zno Films Grown On Nitrided C-Sapphire By Molecular-Beam Epitaxy

Controlled Growth of O-polar ZnO Epitaxial Film by Oxygen Radical Preconditioning of Sapphire Substrate

Preparation of single crystalline AlN thin films on ZnO nanostructures by atomic layer deposition at low temperature

Effect of Sapphire Substrate Nitridation on the Elimination of Rotation Domains in ZnO Epitaxial Films

Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD

Effect of GaN Interlayer on Polarity Control of Epitaxial ZnO Thin Films Grown by Molecular Beam Epitaxy

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Structural Characterization of Zn-polar ZnO Films Grown on Mg-modified C-Al2o3 (0001) Surface

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation

Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface

Controlled Growth Of Zn-Polar Zno Films On Al-Terminated Alpha-Al2o3(0001) Surface By Using Wurtzite Mgo Buffer

Metastable rocksalt ZnO interfacial layer and its influence on polarity selection of Zn-polar ZnO films

Effect of GaN Buffer Layers on the Polarity and Properties of ZnO Epilayers on Nitrided C‐al2o3 by MBE

Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy

Effects of Post-Annealing Treatment on the Structural and Optical Properties of Cubic Mg Chi Zn1-Chi O Thin Films Grown on Sapphire

Influence of the Nucleation Layer Morphology on the Structural Property of AlN Films Grown on C-Plane Sapphire by MOCVD

Controlled Growth of Zn-Polar ZnO Films on Al-Terminated Α-Al 2 O 3 (0001) Surface by Using Wurtzite MgO Buffer

Polarity Control of ZnO Films Grown on Ferroelectric (0001) LiNbO3 Substrates without Buffer Layers by Pulsed-Laser Deposition