Abstract:The initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates were investigated. High-resolution x-ray diffraction and transmission electron microscopy studies revealed that the initial growth behavior and the microstructure of the films were significantly dependent on the growth parameters employed. ZnO films grown at 700°C with an O2 partial pressure of 20mTorr initiated in a columnar growth mode and contained two types of domains. These domains were in plane orientated either ZnO[112¯0]‖Al2O3[101¯0] or ZnO[101¯0]‖Al2O3[101¯0] and were surrounded by highly defective domain boundaries with threading dislocations. ZnO films grown at 800°C with 1mTorr O2 showed a two-dimensional layered growth with only one in-plane epitaxial relationship, ZnO[112¯0]‖Al2O3[101¯0]. Most of the defects in the layered grown films were basal plane stacking faults near the interface between the ZnO and the substrate. The mechanism of formation of the 30°-twisted domains with the in-plane orientation of ZnO[101¯0]‖Al2O3[101¯0] is discussed.

Effect of Sapphire Substrate Nitridation on the Elimination of Rotation Domains in ZnO Epitaxial Films

Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface

Rotation‐domains Suppression and Polarity Control of ZnO Epilayers Grown on Skillfully Treated C‐al2o3 Surfaces

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Controlled Growth of Zn-Polar Zno Epitaxial Film by Nitridation of Sapphire Substrate

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Cubic Nitridation Layers on Sapphire Substrate and Their Role in Polarity Selection of ZnO Films

Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

Controlled Growth of O-polar ZnO Epitaxial Film by Oxygen Radical Preconditioning of Sapphire Substrate

Structural and Optical Studies of Mg(X)Zn(1-X)Ofilms Grown on Sapphire

Growth of ZnO thin films on LSAT(111) substrates by plasma-assisted radio-frequency molecular beam epitaxy

Polarity Control Of Zno Films Grown On Nitrided C-Sapphire By Molecular-Beam Epitaxy

Effects of Sapphire Substrate Annealing on ZnO Epitaxial Films Grown by MOCVD

The strain reduction and quality improvement in ZnO film by a 30° in-plane rotation with respect to the Al2O3 substrate

Rutherford Backscattering and Optical Studies for Zno Thin Films on Sapphire Substrates Grown by Metalorganic Chemical Vapor Deposition

Comparisons of Structural and Optical Properties of ZnO Films Grown on Sapphire and Si(001)

Effects of Post-Annealing Treatment on the Structural and Optical Properties of Cubic Mg Chi Zn1-Chi O Thin Films Grown on Sapphire

The Growth and Annealing of Single Crystalline Zno Films by Low-Pressure Mocvd

Effect of Mgo in Zno Films Grown on Nitrided Sapphires

Tri-Buffer Process: A New Approach to Obtain High-Quality Zno Epitaxial Films on Sapphire Substrates