Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Rotation‐domains Suppression and Polarity Control of ZnO Epilayers Grown on Skillfully Treated C‐al2o3 Surfaces

Polarity-Controlled Growth of High-Quality ZnO Epitaxial Films

Effect of Sapphire Substrate Nitridation on the Elimination of Rotation Domains in ZnO Epitaxial Films

Polarity Control Of Zno Films Grown On Nitrided C-Sapphire By Molecular-Beam Epitaxy

Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy

Controlled Growth of O-polar ZnO Epitaxial Film by Oxygen Radical Preconditioning of Sapphire Substrate

Controlled Growth of Zn-Polar Zno Epitaxial Film by Nitridation of Sapphire Substrate

Effect of GaN Interlayer on Polarity Control of Epitaxial ZnO Thin Films Grown by Molecular Beam Epitaxy

Growth of ZnO thin films on LSAT(111) substrates by plasma-assisted radio-frequency molecular beam epitaxy

Unveiling Interface Structure and Polarity of Wurtzite ZnO Film Epitaxially Grown on A-Plane Sapphire Substrate

Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface

Substrate Polarity and Surface Pretreatment Temperature Dependence of ZnO Homoepitaxy

Effect of GaN Buffer Layers on the Polarity and Properties of ZnO Epilayers on Nitrided C‐al2o3 by MBE

Microstructure and Polarity of Epitaxial ZnO Films Grown on LSAT(111) Substrate Studied by Transmission Electron Microscopy

Cubic Nitridation Layers on Sapphire Substrate and Their Role in Polarity Selection of ZnO Films

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Role of Gallium Wetting Layer in High-Quality Zno Growth on Sapphire(0001) Substrates

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Effect of High Temperature Thermal Treatment of (100) Γ-Lialo2 Substrate on Epitaxial Growth of ZnO Films by Plasma-Assisted Molecular Beam Epitaxy

Structural Characterization of Zn-polar ZnO Films Grown on Mg-modified C-Al2o3 (0001) Surface

Surface Modification of Mgal2o4 (111) for Growth of High-Quality Zno Epitaxial Films