Abstract:The influence of the polarity of ceramic substrates on the structural evolution of thin metal films during annealing at elevated temperatures is investigated, including the competing processes of solid state dewetting (SSD) and grain growth, as well as the atomic structure of the epitaxial interface. For this purpose, Au thin films on polar O-ZnO (0001 ̄) and Zn-ZnO (0001) surfaces are annealed at elevated temperatures and times. Whereas SSD dominates on the O-terminated surface, pronounced grain growth is observed on the Zn-terminated surface. The texture analysis revealed that up to 600°C, both samples exhibit a fiber texture with slightly dominating Au(111)[110] || ZnO(0001)[ 112 ̄0 ] orientation relation (OR 2). At 800°C, Au on Zn-ZnO exhibits a transformation to a mazed bicrystal structure with Au(111)[110] || ZnO(0001)[ 101 ̄0 ] orientation relation (OR 1). Comparison of various interface structures in density-functional theory (DFT) indicates that atomically sharp interfaces between the Au(111) films and the ideal bulk-truncated polar ZnO surfaces are energetically favored for both substrate polarities in excellent agreement with atomically resolved electron microscopy. Due to the larger period of the coincidence site lattice in OR 2, the corresponding interface can be described as semi-coherent with clearly separated misfit dislocations. In contrast, the much smaller period of the (approximate) coincidence site lattice in OR 1 leads to a largely incoherent interface with local reconstructions. However, in the experimental situation, even a small rotational deviation from the perfect OR 1 can introduce an interfacial screw dislocation network superimposed on the incoherent interface structure, effectively making the interface semi-coherent.

Substrate Polarity and Surface Pretreatment Temperature Dependence of ZnO Homoepitaxy

Effect of Reaction Temperature on Surface Morphology and Photoelectric Properties of ZnO Grown by Hydrothermal Method in Mixed Solvent

Polarity-Controlled Growth of High-Quality ZnO Epitaxial Films

Comparison of Structural and Optical Properties of ZnO Films Grown on Different Substrates at Low Temperatures

Effect of High Temperature Thermal Treatment of (100) Γ-Lialo2 Substrate on Epitaxial Growth of ZnO Films by Plasma-Assisted Molecular Beam Epitaxy

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Growth of ZnO thin films on LSAT(111) substrates by plasma-assisted radio-frequency molecular beam epitaxy

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

STRUCTURAL AND OPTICAL STUDIES OF ZnO FILMS GROWN AT LOW TEMPERATURE

Homoepitaxy of ZnO: from the substrates to doping

Controlled Growth Of Zn-Polar Zno Films On Al-Terminated Alpha-Al2o3(0001) Surface By Using Wurtzite Mgo Buffer

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Influence of Substrate Polarity on Thermal Stability, Grain Growth and Atomic Interface Structure of Au Thin Films on ZnO Surfaces

Influence Of Substrate Temperature On The Structure And Electric Properties Of Zno Films

Polarity Control Of Zno Films Grown On Nitrided C-Sapphire By Molecular-Beam Epitaxy

Growth and Characterization of Undoped Polycrystalline ZnO Films

Growth and characterization of nonpolar ZnO (101¯0) epitaxial film on γ-LiAlO2 substrate by chemical vapor deposition

Controlled Growth of Zn-Polar ZnO Films on Al-Terminated Α-Al 2 O 3 (0001) Surface by Using Wurtzite MgO Buffer

Controlled Growth of O-polar ZnO Epitaxial Film by Oxygen Radical Preconditioning of Sapphire Substrate