Abstract:Al-doped ZnO films were grown by reactive electron beam evaporation with ceramic targets,(ZnO)_(1-x)(Al_2O_3)_x(x=w(Al_2O_3)=0, 0.01,0.02,0.05),as source materials.The structural and electrical properties of Al-doped ZnO films were characterized by X-ray diffraction,Raman scattering and Hall investigations.The results showed that Al-doped ZnO films grown from(ZnO)_(1-x)(Al_2O_3)_x(x≤0.02) targets were still highly c-axis oriented,although the degree of c-axis orientation was somewhat degenerated along with further increase of Al content in the films.Raman scattering measurements indicated that the internal stress in Al-doped ZnO films increased along with the increase of Al content in the films and reached saturation in the case of x = 0.02.The actual atomic Al content in the films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was 6%,which was normalized with the Zn content in the film.The resistivity of Al-doped ZnO films first decreased with the increase of Al content in the film and reached a minimum of 7.85×10~(-4) Ω·cm at x=(0.02,) then increased with further increase of Al content in the film.The nature of the minimum resistivity of Al-doped ZnO films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was ascribed to the high electron density(1.32×10~(21) cm~(-3)) as well as its high electron mobility of 6.02 cm~2/(V·s).

Controlled Growth of Zn-Polar ZnO Films on Al-Terminated Α-Al 2 O 3 (0001) Surface by Using Wurtzite MgO Buffer

Controlled Growth Of Zn-Polar Zno Films On Al-Terminated Alpha-Al2o3(0001) Surface By Using Wurtzite Mgo Buffer

Controlled Growth of Zn-polar ZnO Film on MgAl2O4 (1 1 1) Substrate Using MgO Buffer Layer

Structural Characterization of Zn-polar ZnO Films Grown on Mg-modified C-Al2o3 (0001) Surface

Controlled Growth of O-polar ZnO Epitaxial Film by Oxygen Radical Preconditioning of Sapphire Substrate

Controlled Growth of Zn-Polar Zno Epitaxial Film by Nitridation of Sapphire Substrate

Growth of ZnO thin films on LSAT(111) substrates by plasma-assisted radio-frequency molecular beam epitaxy

Surface Modification of Mgal2o4 (111) for Growth of High-Quality Zno Epitaxial Films

Polarity Control of ZnO Films Grown on Ferroelectric (0001) LiNbO3 Substrates without Buffer Layers by Pulsed-Laser Deposition

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Polarity Control Of Zno Films Grown On Nitrided C-Sapphire By Molecular-Beam Epitaxy

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Metastable rocksalt ZnO interfacial layer and its influence on polarity selection of Zn-polar ZnO films

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy

Growth of Non-Polar Zn1−x Mg X O Thin Films with Different Mg Contents on R-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

MBE‐grown ZnO Film on Sapphire Substrate with Double Buffer Layers

Growth and characterization of nonpolar ZnO (101¯0) epitaxial film on γ-LiAlO2 substrate by chemical vapor deposition

Epitaxial Deposition of Zn (0 0 2) for Stable Zinc Metal Anodes

Effect of High Temperature Thermal Treatment of (100) Γ-Lialo2 Substrate on Epitaxial Growth of ZnO Films by Plasma-Assisted Molecular Beam Epitaxy

Growth of Cubic MgxZn1-xO Films and Characterization