Abstract:After the discovery of ferroelectricity in HfO$_2$ based thin films a decade ago, ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) thin films are frequently being utilized in the CMOS (Complementary Metal- Oxide Semiconductor) and logic devices, thanks to their large remnant polarization, high retention and endurance. A great deal of effort has been made towards understanding the origin of ferroelectricity in epitaxial HZO thin films and controlling the microstructure at the atomic level which governs the ferroelectric phase. Nevertheless, the HZO films still suffer from fundamental questions, such as (1) the vagueness of interfacial mechanisms between HZO, buffer layer and the substrate which controls the polar phase; (2) the nature of the metastable polar phase responsible for the ferroelectricity, be it orthorhombic or rhombohedral; which are poorly understood. Here, we have addressed these issues by employing the in-situ reflection high energy electron diffraction -- assisted pulsed laser deposition and mapping the asymmetrical polar maps on high quality HZO films grown on functional perovskite oxide substrates. The interface between La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) and the substrate is shown to be quite important, and a slightly rougher interface of the former destabilizes the ferroelectric phase of HZO irrespective of well-controlled growth of the ferroelectric layers. A rhombohedral-like symmetry of HZO unit cell is extracted through the x-ray diffraction asymmetrical polar maps. The ferroelectric measurements on a nearly 7 nm HZO film on STO(001) substrate display a remnant polarization close to 8 uC/cm$^2$. These results highlight the complexities involved at the atomic scale interface in the binary oxides thin films and can be of importance to the HfO$_2$-based ferroelectric community which is still at its infancy.

INHERITED THYROXINE EXCESS: A SERUM ABNORMALITY DUE TO AN INCREASED AFFINITY FOR MODIFIED ALBUMIN

Polarity Control Of Zno Films Grown On Nitrided C-Sapphire By Molecular-Beam Epitaxy

Polarization State Dependence of Laser-Induced Domain Nucleation in Lithium Niobate Crystals Investigated by Digital Holography

Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy

Controlled Growth Of Zn-Polar Zno Films On Al-Terminated Alpha-Al2o3(0001) Surface By Using Wurtzite Mgo Buffer

Controlled Growth of Zn-Polar ZnO Films on Al-Terminated Α-Al 2 O 3 (0001) Surface by Using Wurtzite MgO Buffer

Effect of GaN Interlayer on Polarity Control of Epitaxial ZnO Thin Films Grown by Molecular Beam Epitaxy

Polarization Screening-Induced Epitaxial Growth and Interfacial Magnetism of BiFeO3/PbTiO3 Nanoplates

Metastable rocksalt ZnO interfacial layer and its influence on polarity selection of Zn-polar ZnO films

Growth of Highly C-Axis-oriented Pb(Zr0.53Ti0.47) O3 Thin Films on LaNiO3 Electrodes by Pulsed Laser Ablation

Complexities in the growth and stabilization of polar phase in the Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films grown by Pulsed Laser Deposition

Effect of GaN Buffer Layers on the Polarity and Properties of ZnO Epilayers on Nitrided C‐al2o3 by MBE

Controlled Growth of O-Polar Zno Epitaxial Film by Oxygen Radical Preconditioning of Sapphire Substrate

Research on Spectral-Properties of Nonpolar ZnO Film on Γ-Lialo2

Atomic Mechanism of Polarization-Controlled Surface Reconstruction in Ferroelectric Thin Films.

Controlled Growth of Zn-Polar Zno Epitaxial Film by Nitridation of Sapphire Substrate

Tunable Resistive Switching Behaviour in Ferroelectric–zno Bilayer Films

Controlled Growth of Zn-polar ZnO Film on MgAl2O4 (1 1 1) Substrate Using MgO Buffer Layer

Cubic Nitridation Layers on Sapphire Substrate and Their Role in Polarity Selection of ZnO Films

Interface Control Of Surface Photochemical Reactivity In Ultrathin Epitaxial Ferroelectric Films

Ferroelectric Domain Structure Evolution In Ba(Zr0.1ti0.9)O-3/(Ba0.75ca0.25)Tio3 Heterostructures