Abstract:The performance of nitride devices is strongly affected by their polarity. Understanding the polarity determination and evolution mechanism of polar wurtzite nitrides on nonpolar substrates is therefore critically important. This work confirms that the polarity of AlN on sapphire prepared by metal-organic chemical vapor deposition is not inherited from the nitrides/sapphire interface as widely accepted, instead, experiences a spontaneous polarity inversion during the growth. It is found that at the initial growth stage, the interface favors the nitrogen-polarity, rather than the widely accepted metal-polarity or randomly coexisting. However, the polarity subsequently converts into the metal-polar situation, at first locally then expanding into the whole area, driven by the anisotropy of surface energies, which results in universally existing inherent inverse grain boundaries. Furthermore, vertical two-dimensional electron accumulation originating from the lattice symmetry breaking at the inverse grain boundary is first revealed. This work identifies another cause of high-density defects in nitride epilayers, besides lattice mismatch induced dislocations. These findings also offer new insights into atomic structure and determination mechanism of polarity in nitrides, providing clues for its manipulation toward the novel hetero-polarity devices.

Polarity Control Of Zno Films Grown On Nitrided C-Sapphire By Molecular-Beam Epitaxy

Controlled Growth of Zn-Polar Zno Epitaxial Film by Nitridation of Sapphire Substrate

Controlled Growth of O-polar ZnO Epitaxial Film by Oxygen Radical Preconditioning of Sapphire Substrate

Effect of GaN Interlayer on Polarity Control of Epitaxial ZnO Thin Films Grown by Molecular Beam Epitaxy

Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy

Polarity Control of ZnO Films Grown on Ferroelectric (0001) LiNbO3 Substrates without Buffer Layers by Pulsed-Laser Deposition

Controlled Growth Of Zn-Polar Zno Films On Al-Terminated Alpha-Al2o3(0001) Surface By Using Wurtzite Mgo Buffer

Rotation‐domains Suppression and Polarity Control of ZnO Epilayers Grown on Skillfully Treated C‐al2o3 Surfaces

Controlled Growth of Zn-Polar ZnO Films on Al-Terminated Α-Al 2 O 3 (0001) Surface by Using Wurtzite MgO Buffer

Cubic Nitridation Layers on Sapphire Substrate and Their Role in Polarity Selection of ZnO Films

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Effect of GaN Buffer Layers on the Polarity and Properties of ZnO Epilayers on Nitrided C‐al2o3 by MBE

Substrate Polarity and Surface Pretreatment Temperature Dependence of ZnO Homoepitaxy

Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface

Structural Characterization of Zn-polar ZnO Films Grown on Mg-modified C-Al2o3 (0001) Surface

Metastable rocksalt ZnO interfacial layer and its influence on polarity selection of Zn-polar ZnO films

Controlled Growth of Zn-polar ZnO Film on MgAl2O4 (1 1 1) Substrate Using MgO Buffer Layer

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD

Polarity control by inversion domain suppression in N-polar III-nitride heterostructures

Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire