Abstract:Al-doped ZnO films were grown by reactive electron beam evaporation with ceramic targets,(ZnO)_(1-x)(Al_2O_3)_x(x=w(Al_2O_3)=0, 0.01,0.02,0.05),as source materials.The structural and electrical properties of Al-doped ZnO films were characterized by X-ray diffraction,Raman scattering and Hall investigations.The results showed that Al-doped ZnO films grown from(ZnO)_(1-x)(Al_2O_3)_x(x≤0.02) targets were still highly c-axis oriented,although the degree of c-axis orientation was somewhat degenerated along with further increase of Al content in the films.Raman scattering measurements indicated that the internal stress in Al-doped ZnO films increased along with the increase of Al content in the films and reached saturation in the case of x = 0.02.The actual atomic Al content in the films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was 6%,which was normalized with the Zn content in the film.The resistivity of Al-doped ZnO films first decreased with the increase of Al content in the film and reached a minimum of 7.85×10~(-4) Ω·cm at x=(0.02,) then increased with further increase of Al content in the film.The nature of the minimum resistivity of Al-doped ZnO films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was ascribed to the high electron density(1.32×10~(21) cm~(-3)) as well as its high electron mobility of 6.02 cm~2/(V·s).

Structural Characterization of Zn-polar ZnO Films Grown on Mg-modified C-Al2o3 (0001) Surface

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Controlled Growth of Zn-Polar ZnO Films on Al-Terminated Α-Al 2 O 3 (0001) Surface by Using Wurtzite MgO Buffer

Structural and Optical Studies of Mg(X)Zn(1-X)Ofilms Grown on Sapphire

Controlled Growth Of Zn-Polar Zno Films On Al-Terminated Alpha-Al2o3(0001) Surface By Using Wurtzite Mgo Buffer

Microstructue and Optical Properties of Mg-doped ZnO Thin Films Prepared by Sol-gel Method

Growth of Non-Polar Zn1−x Mg X O Thin Films with Different Mg Contents on R-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

Controlled Growth of Zn-polar ZnO Film on MgAl2O4 (1 1 1) Substrate Using MgO Buffer Layer

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Characterizations of Cubic ZnMgO Films Grown on Si(111) at Low Substrate Temperature

Growth of Cubic MgxZn1-xO Films and Characterization

Surface Modification of Mgal2o4 (111) for Growth of High-Quality Zno Epitaxial Films

Epitaxial Deposition of Zn (0 0 2) for Stable Zinc Metal Anodes

Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

Controlled Growth of Zn-Polar Zno Epitaxial Film by Nitridation of Sapphire Substrate

Comparisons of Structural and Optical Properties of ZnO Films Grown on Sapphire and Si(001)

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Controlled Growth of O-polar ZnO Epitaxial Film by Oxygen Radical Preconditioning of Sapphire Substrate

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

LP-MOCVD Growth and Properties of Zn1－xMgxO Thin Film

Oxygen Polarity and Interfacial Atomic Arrangement in an MgxZn1−xO/C-MgO/sapphire Heterostructure