Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Surface Modification of Mgal2o4 (111) for Growth of High-Quality Zno Epitaxial Films

Controlled Growth of Zn-polar ZnO Film on MgAl2O4 (1 1 1) Substrate Using MgO Buffer Layer

Effect of Magnesium Doping on the Light-Induced Hydrophilicity of Zno Thin Films

Controlled Growth Of Zn-Polar Zno Films On Al-Terminated Alpha-Al2o3(0001) Surface By Using Wurtzite Mgo Buffer

Controlled Growth of Zn-Polar ZnO Films on Al-Terminated Α-Al 2 O 3 (0001) Surface by Using Wurtzite MgO Buffer

Epitaxial Deposition of Zn (0 0 2) for Stable Zinc Metal Anodes

Growth of ZnO thin films on LSAT(111) substrates by plasma-assisted radio-frequency molecular beam epitaxy

Structural Characterization of Zn-polar ZnO Films Grown on Mg-modified C-Al2o3 (0001) Surface

Role of Gallium Wetting Layer in High-Quality Zno Growth on Sapphire(0001) Substrates

Controlled Growth of Zn-Polar Zno Epitaxial Film by Nitridation of Sapphire Substrate

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Interface Engineering For Lattice-Matched Epitaxy Of Zno On (La,Sr)(Al,Ta)O-3(111) Substrate

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface

Growth of Non-Polar Zn1−x Mg X O Thin Films with Different Mg Contents on R-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

Structural, Morphology and Optical Properties of Epitaxial Zno Films Grown on Al2o3 by Mocvd

Growth of Cubic MgxZn1-xO Films and Characterization

Improved epitaxy of ZnO films by regulating the layers of graphene

Effect of High Temperature Thermal Treatment of (100) Γ-Lialo2 Substrate on Epitaxial Growth of ZnO Films by Plasma-Assisted Molecular Beam Epitaxy

Initial Oxidation and Interfacial Diffusion of Zn on Faceted MgO(111) Films.