Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

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Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Surface Modification of Mgal2o4 (111) for Growth of High-Quality Zno Epitaxial Films

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Growth of High-Quality ZnO Thin Films on ( 112̅0 ) A-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Improved epitaxy of ZnO films by regulating the layers of graphene

Growth of Epitaxial C-Plane Zno Film on A-Plane Sapphire by Radio Frequency Reactive Magnetron Sputtering

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Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering

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