Interface Engineering For Lattice-Matched Epitaxy Of Zno On (La,Sr)(Al,Ta)O-3(111) Substrate

Minju Ying,Xiaolong Du,Yuzi Liu,ZhongTang Zhou,Zhaoquan Zeng,Zengxia Mei,Jinfeng Jia,Hong Chen,Qikun Xue,Ze Zhang
DOI: https://doi.org/10.1063/1.2130523
IF: 4
2005-01-01
Applied Physics Letters
Abstract:ZnO/(La,Sr)(Al,Ta)O-3(LSAT) heterointerface is engineered to control the crystallographic orientation of ZnO films grown by plasmas-assisted molecular beam epitaxy. Lattice-matched in-plane alignment of [11 (2) over bar0](ZnO)parallel to[11 (2) over bar](LSAT) has been realized using Mg modification of the substrate surface, which is confirmed with in situ reflection high-energy electron diffraction observation, and ex situ characterization of x-ray diffraction and transmission electron microscopy. The low-temperature deposition and high-temperature treatment of the Mg layer on the oxygen-terminated LSAT(111) surface results in selective nucleation of a MgO interface layer which serves as a template for single-domain epitaxy of ZnO. Oxygen-polar ZnO film with an atomically smooth surface has been obtained, which is favorable for metal-ZnO Schottky contact with high barrier height. (C) 2005 American Institute of Physics.
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