Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Interface Control for Epitaxial Growth of High-quality Zn0(0001Film on Si(111)Substrate

Low-Temperature Interface Engineering For High-Quality Zno Epitaxy On Si(111) Substrate

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Characterizations of Cubic ZnMgO Films Grown on Si(111) at Low Substrate Temperature

Interface Engineering For Lattice-Matched Epitaxy Of Zno On (La,Sr)(Al,Ta)O-3(111) Substrate

Epitaxial growth of ZnO on (1 1 1) Si free of an amorphous interlayer

Cubic Mgxzn1-Xo Films Grown on Si(111)

Epitaxial Orientation of Mg2Si(110) Thin Film on Si(111) Substrate

Comparison of Structural and Optical Properties of ZnO Films Grown on Different Substrates at Low Temperatures

A Study of ZnO/Si(111)Interface Structure by Synchrotron Radiation X-Ray Grazing Incident Diffraction

Growth of Cubic MgxZn1-xO Films and Characterization

Study of ZnO/Si(111) interface structure by synchrotron radiation X-ray grazing incident diffraction

Epitaxial Zn1−Mg O Films Grown on (1 1 1) Si by Pulsed Laser Deposition

Epitaxial growth of ZnO films on thin FeO(111) layers

Controlled Growth of Zn-Polar ZnO Films on Al-Terminated Α-Al 2 O 3 (0001) Surface by Using Wurtzite MgO Buffer

Controlled Growth of Zn-Polar Zno Epitaxial Film by Nitridation of Sapphire Substrate

Initial Oxidation and Interfacial Diffusion of Zn on Faceted MgO(111) Films.

Epitaxial Growth of Monoclinic and Cubic ZrO2 on Si(100) Without Prior Removal of the Native SiO2

ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy

Controlled Growth Of Zn-Polar Zno Films On Al-Terminated Alpha-Al2o3(0001) Surface By Using Wurtzite Mgo Buffer