Abstract:Results are presented for modelling of the evaporation and magnetron sputter deposition of Zn(x)O(y) onto an O-terminated ZnO (0001¯) wurtzite surface. Growth was simulated through a combination of molecular dynamics (MD) and an on-the-fly kinetic Monte Carlo (otf-KMC) method, which finds diffusion pathways and barriers without prior knowledge of transitions. We examine the effects of varying experimental parameters, such as substrate bias, distribution of the deposition species and annealing temperature. It was found when comparing evaporation and sputtering growth that the latter process results in a denser and more crystalline structure, due to the higher deposition energy of the arriving species. The evaporation growth also exhibits more stacking faults than the sputtered growth. Post-annealing at 770 K did not allow complete recrystallization, resulting in films which still had stacking faults where monolayers formed in the zinc blende phase, whereas annealing at 920 K enabled the complete recrystallization of some films to the wurtzite structure. At the latter temperature atoms could also sometimes be locked in the zinc blende phase after annealing. When full recrystallization did not take place, both wurtzite and zinc blende phases were seen in the same layer, resulting in a phase boundary. Investigation of the various distributions of deposition species showed that, during evaporation, the best quality film resulted from a stoichiometric distribution where only ZnO clusters were deposited. During sputtering, however, the best quality film resulted from a slightly O rich distribution. Two stoichiometric distributions, one involving mainly ZnO clusters and the other involving mainly single species, showed that the distribution of deposition species makes a huge impact on the grown film. The deposition of predominantly single species causes many more O atoms at the surface to be sputtered or reflected, resulting in an O deficiency of up to 18% in the deposited film and therefore resulting in more stacking faults and phase boundaries. The methods used allow analysis of key mechanisms that occur during the growth process and give hints as to the optimum conditions under which complete crystalline layers can form.

Homoepitaxy of ZnO: from the substrates to doping

The growth of nanoscale ZnO films by pulsed-spray evaporation chemical vapor deposition and their structural, electric and optical properties

Effect of Nucleation and Growth Kinetics on the Electrical and Optical Properties of Undoped ZnO Films

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

STRUCTURAL AND OPTICAL STUDIES OF ZnO FILMS GROWN AT LOW TEMPERATURE

The Growth and Annealing of Single Crystalline Zno Films by Low-Pressure Mocvd

Substrate Polarity and Surface Pretreatment Temperature Dependence of ZnO Homoepitaxy

The epitaxial growth of wurtzite ZnO films on LiNbO3 (0 0 0 1) substrates

Homoepitaxial growth of ZnO nanostructures from bulk ZnO

Production Of High-Quality Zno Films By The Two-Step Annealing Method

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Zno Thin Film Grown on Silicon by Metal-Organic Chemical Vapor Deposition

Growth of ZnO Film by Plasma-assisted MOCVD

The Evolution And Mechanisms Of Unintentional Doping In Zno Epitaxial Growth

Modelling the growth of ZnO thin films by PVD methods and the effects of post-annealing

Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

B23-O-15 Van Der Waals Epitaxial Growth of Highly-textured ZnO Thin Film on Surface-modified Silicon Substrates by Chemical Bath Deposition