Abstract:Beyond three-dimensional (3D) architectures, polar semiconductor heterostructures are developing in the direction of two-dimensional (2D) scale with mix-dimensional integration for novel properties and multifunctional applications. Herein, we stacked 2D Janus MoSSe and 3D wurtzite GaN polar semiconductors to construct MoSSe/GaN polar heterostructures by polarity configurations. The structural stability was enhanced as binding energy changed from -0.08 eV/-0.17 eV in the N polarity to -0.24 eV/-0.42 eV in the Ga polarity. In particular, the polarity reversal of GaN in contact with Janus MoSSe not only determined the charge transfer direction but also significantly increased the electrostatic potential difference from 0.71 eV/0.78 eV in the N polarity to 3.13 eV/2.24 eV in the Ga polarity. In addition, strain modulation was further utilized to enhance interfacial polarization and tune the electronic energy band profiles of Janus MoSSe/GaN polar heterostructures. By applying in-plane biaxial strains, the AA and AA ' polarity configurations induced band alignment transition from type I (tensile) to type II (compressive). As a result, both the polarity reversal and strain modulation provide effective ways for the multifunctional manipulation and facile design of Janus MoSSe/III-nitrides polar heterostructures, which broaden the Janus 2D/3D polar semiconducting devices in advanced electronics, optoelectronics, and energy harvesting applications. 2D/3D Janus TMDs/III-nitrides polar heterointerfaces enable polarity manipulation to modulate their structural stability, electrostatic potential, charge transfer, and electronic band-structures for developing novel multifunctional applications.

Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration (Adv. Mater. 5/2022)

Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration

Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

Effect of GaN Interlayer on Polarity Control of Epitaxial ZnO Thin Films Grown by Molecular Beam Epitaxy

Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity

Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD (Small 16/2022)

Polarity Reversal and Strain Modulation of Janus MoSSe/GaN Polar Semiconductor Heterostructures.

Polarity reversal and strain modulation of Janus MoSSe/GaN polar semiconductor heterostructures

Polarity Control of Heteroepitaxial GaN Nanowires on Diamond

Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

Polarity control by inversion domain suppression in N-polar III-nitride heterostructures

Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires

Polarity-induced selective area epitaxy of GaN nanowires

Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD

Polarity Dependence of Hexagonal Gan Films on Two Opposite C Faces of Al2o3 Substrate

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene

Van Der Waals Coherent Epitaxy of GaN and InGaN/GaN Multi-Quantum-well Via a Graphene Inserted Layer

Achievement of Polarity Reversion from Al(Ga)-polar to N-polar for AlGaN Film on AlN Seeding Layer Grown by a Novel Flow‐modulation Technology

Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates (Adv. Funct. Mater. 14/2022)

Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy

Principles for 2D Material Assisted Nitrides Epitaxial Growth