Abstract:This study reviews the current state of III‐nitride synthesis on different 2D materials for a variety of flexible applications, meanwhile identifying key advances in this rapidly accelerating field. The focus of this study is to provide guidelines on the exfoliation of epitaxial layers using 2D materials, with the aim of fabricating flexible nitride devices. Group III‐nitrides have attracted significant attention in recent years for their wide tunable band‐gaps and excellent optoelectronic capabilities, which are advantageous for several applications including light‐emitting diodes, lasers, photodetectors, and large‐size low‐cost power electronic devices. However, conventional epitaxy accompanied by the covalent bond formation renders the transfer of nitride epilayers difficult, thereby limiting the application potential of nitrides in wearable and flexible electronics. Furthermore, interfacial covalent bonds also limit substrate selection and hinder the development of heterogeneous integration between nitrides and other material systems. 2D materials can mitigate these problems significantly. On the one hand, due to the weak van der Waals forces between the layers of 2D materials, influences of lattice mismatch can be avoided to improve crystal quality. On the other hand, delamination and transfer of nitride epilayers can be achieved easily. Therefore, this study focuses on providing comprehensive guidelines regarding the exfoliation of epitaxial layers using 2D materials to provide new design freedoms for nitride devices. Different 2D buffers and release layers have also been discussed. Furthermore, the limitations, promising solutions, future directions, and applicability of this strategy to flexible nitride devices are presented.

Principles for 2D Material Assisted Nitrides Epitaxial Growth

Epitaxy of 2D Materials toward Single Crystals

Understanding epitaxial growth of two-dimensional materials and their homostructures.

Lattice Modulation Strategies for 2D Material Assisted Epitaxial Growth

Single-crystal two-dimensional material epitaxy on tailored non-single-crystal substrates

Growth of Single Crystalline 2D Materials beyond Graphene on Non‐metallic Substrates

The epitaxy of 2D materials growth

Influence of Nitridation on III-nitride Films Grown on Graphene/quartz Substrates by Plasma-Assisted Molecular Beam Epitaxy

Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy:a review

Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy

Hybrid van der Waals Epitaxy

Molecular Epitaxy on Two-Dimensional Materials: The Interplay between Interactions

First-principle Calculations of Adsorption of Ga (al, N) Adatoms on the Graphene for the Van-Der-waals Epitaxy

Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives

Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering

The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation

Straightforward strategy for selecting and tuning substrates for two-dimensional material epitaxy

Transfer-free Chemical Vapor Deposition Graphene for Nitride Epitaxy: Challenges, Current Status and Future Outlook

Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

Van Der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications