Abstract:III-nitride semiconductor films are usually achieved by epitaxial growth on single-crystalline substrates (sapphire, silicon (Si), and silicon carbide). It is important to grow these films on non-epitaxial substrates of interest such as polycrystalline substrates for exploring novel applications in electronics and optoelectronics. However, single-crystalline III-nitride films with uniform orientation on non-epitaxial substrates have not yet been realized, due to the lack of crystallographic orientation of the substrates. Here, this work proposes a strategy of polarization-driven-orientation selective growth (OSG) and demonstrate that single-crystalline gallium nitride (GaN) can in principle be achieved on any substrates. Taking polycrystalline diamond and amorphous-silicon dioxide/Si substrates as typical examples, the OSG is demonstrated by utilizing a composed buffer layer consisting of graphene and polycrystalline physical vapor deposited (PVD) aluminium nitride (AlN). The polarization of the PVD AlN can effectively tune the strength of interfacial orbital coupling between AlN nuclei and graphene at different rotation angles, as confirmed by atom-scale first-principles calculations, and align the AlN nuclei to form a uniform orientation. This consequently leads to continuous single-crystalline GaN films. The ability to grow single-crystalline III-nitrides onto any desired substrates would create unprecedented opportunities for developing novel electronic and optoelectronic devices.

Influence of Nitridation on III-nitride Films Grown on Graphene/quartz Substrates by Plasma-Assisted Molecular Beam Epitaxy

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

First-principle Calculations of Adsorption of Ga (al, N) Adatoms on the Graphene for the Van-Der-waals Epitaxy

Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature

Transferable InGaN Quantum Well Grown at Low Temperature on Amorphous Substrates by Plasma-Assisted Molecular Beam Epitaxy

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene

Influence of Graphene Stability on III-Nitride Remote Epitaxy for Exfoliation

Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates

Van Der Waals Coherent Epitaxy of GaN and InGaN/GaN Multi-Quantum-well Via a Graphene Inserted Layer

Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition

Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth

Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth

Van Der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

The Effects of Substrate Nitridation on the Growth of Nonpolar A-Plane GaN on R-Plane Sapphire by Metalorganic Chemical Vapor Deposition

Role of nitrogen source flow on the growth of 2D GaN crystals

Transfer-free Chemical Vapor Deposition Graphene for Nitride Epitaxy: Challenges, Current Status and Future Outlook

Graphene‐Nanorod Enhanced Quasi‐Van Der Waals Epitaxy for High Indium Composition Nitride Films

III-nitride Epitaxy by Ion Filtered Inductively Coupled Plasma MOCVD

Graphene-assisted Low Temperature Growth of Nearly Single-Crystalline GaN Thin Films Via Plasma-Enhanced Atomic Layer Deposition

The Influence of High-Temperature Nitridation Process on the Crystalline Quality of Semipolar (112‾2) GaN Epitaxial Films

The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation