Abstract:Remote epitaxy has garnered considerable attention as a promising method that facilitates the growth of thin films that replicate the crystallographic characteristics of a substrate by utilizing two-dimensional (2D) material interlayers like graphene. The resulting film can be exfoliated to form a freestanding membrane, and the substrate, if expensive, can be reused. However, atomically thin 2-D materials are susceptible to damage before and during film growth in the chamber, leading to a poor epitaxy. Oxide remote epitaxy using graphene, the most commonly available 2D material, is particularly challenging because the conventional conditions employed for the growth of epitaxial oxides also degrade graphene. In this study, we show for the first time that a direct correlation exists between the microstructure of graphene, its getting defective on exposure to the pulsed laser deposition plume, and the crystalline quality of the barium titanate film deposited on top. A controlled aperture method was used to reduce graphene damage. Even so, the degree of damage is more at the graphene grain boundaries than within the grains. Large grain-sized greater than 300 microns, graphene suffered less damage and yielded a film comparable to that grown directly on a strontium titanate substrate with a rocking curve half width of 0.6 degrees. Using large grain-sized bi-layer graphene, 4 mm x 5 mm oxide layers were successfully exfoliated and transferred onto SiOx-Si. These insights pave the way for the heterogeneous integration of functional oxides on foreign substrates, holding significant implications for commercializing perovskite oxides by integrating them with Si-CMOS and flexible electronics.

Influence of Graphene Stability on III-Nitride Remote Epitaxy for Exfoliation

Remote Epitaxy and Exfoliation of GaN Via Graphene

The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation

Exceptional Thermochemical Stability of Graphene on N-Polar GaN for Remote Epitaxy

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene

Influence of Nitridation on III-nitride Films Grown on Graphene/quartz Substrates by Plasma-Assisted Molecular Beam Epitaxy

Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask

Influence of Temperature‐Dependent Substrate Decomposition on Graphene for Separable GaN Growth

First-principle Calculations of Adsorption of Ga (al, N) Adatoms on the Graphene for the Van-Der-waals Epitaxy

Remote epitaxy of GaN via graphene on GaN/sapphire templates

Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering

Van Der Waals Coherent Epitaxy of GaN and InGaN/GaN Multi-Quantum-well Via a Graphene Inserted Layer

Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film

Free Standing Epitaxial Oxides Through Remote Epitaxy: The Role of the Evolving Graphene Microstructure

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Direct van der Waals epitaxy of stress-free GaN films on PECVD grown graphene

Hybrid van der Waals Epitaxy

Transfer-free Chemical Vapor Deposition Graphene for Nitride Epitaxy: Challenges, Current Status and Future Outlook