Abstract:Remote epitaxy is a very promising technique for the preparation of single-crystal thin films of flexibly transferred III-V group semiconductors. However, the epilayer nucleation mechanism of remote epitaxy and the epilayer-substrate interface interactions on both sides of graphene are not well-understood. In this study, remote homo- and heteroepitaxy of GaN nucleation layers (NLs) were performed by metal organic chemical vapor deposition on GaN, sapphire (Al2O3), and AlN substrates with transferred single-layer graphene, respectively. The results show that the interface damage of SLG/GaN at high temperature is difficult for us to achieve the remote homoepitaxy of GaN. Therefore, we explored the nucleation mechanism of remote heteroepitaxy of GaN on SLG/Al2O3 and SLG/AlN substrates. Nucleation density, surface coverage, diffusion coefficient, and scaled nucleation density were used to quantify the differences in nucleation information of GaN grown on different polar substrates. Using high-resolution X-ray diffraction and high-resolution transmission electron microscopy analysis, we revealed the interfacial orientation relationship and atomic arrangement distribution between the GaN NLs and substrates on both sides of the SLG. The electrostatic potential effect and adsorption ability of the substrates were further investigated by first-principles calculations based on density functional theory, revealing the principle that the substrate polarity affects the atomic nucleation density. The partial density of states shows that there is long-range orbital hybridization of the electronic states of the substrate and adsorbed atoms in remote epitaxy, and the crystal properties of the substrate play an important role in the in-plane orientation relationship of the NL and substrate across the SLG. The abovementioned results reveal the nature of remote epitaxy and broaden the perspective for the rapid and large-area preparation of single-crystal GaN films.

Hybrid van der Waals Epitaxy

Growth model of van der Waals epitaxy of films: A case of AlN films on multilayer graphene/SiC.

Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering

First-principle Calculations of Adsorption of Ga (al, N) Adatoms on the Graphene for the Van-Der-waals Epitaxy

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures

Van Der Waals Coherent Epitaxy of GaN and InGaN/GaN Multi-Quantum-well Via a Graphene Inserted Layer

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

Van Der Waals Epitaxial AlGaN/GaN Growth on Hexagonal BN Via Two-Dimensional N-induced Dislocation Slip

Long-Range Orbital Hybridization in Remote Epitaxy: the Nucleation Mechanism of GaN on Different Substrates Via Single-Layer Graphene.

Wafer Level Quasi-Van Der Waals Epitaxy of AlGaN/GaN Heterojunctions on Sp2-Bonded BN Controlled by AlN Nucleation Layer

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

The Fabrication of AlN by Hydride Vapor Phase Epitaxy

Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer

The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation

The Essential Difference Between Remote Epitaxy and Van Der Waals Epitaxy: Long-range Orbital Hybridization at the GaN/graphene/AlN Interface

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

Principles for 2D Material Assisted Nitrides Epitaxial Growth

Three-step Growth of AlN Films on Sapphire Substrates by Metal Nitride Vapor Phase Epitaxy

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene

Homoepitaxy Growth of High‐Quality AlN Film on MOCVD AlN Template by Hydride Vapor Phase Epitaxy

Large-Area Van Der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride